Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SISn on Insulator

Kota Okamoto, Tomohiro Kosugi, Taizoh Sadoh

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Solid-phase crystallization of high-Sn concentration SiSn films on insulator has been investigated at low-temperatures. It is found that crystallization velocities significantly increase with increasing thickness. The total Sn concentrations in grown films show uniform profiles, which are almost similar to those before annealing. The substitutional Sn concentrations in grown layers significantly exceed the thermal equilibrium solid-solubility of Sn in Ge. These results demonstrate that low-temperature solid-phase crystallization is very useful to realize non-thermal equilibrium states of SiSn films.

Original languageEnglish
Title of host publicationProceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices
Subtitle of host publicationTFT Technologies and FPD Materials
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages116-117
Number of pages2
ISBN (Electronic)9784991216909
Publication statusPublished - 2021
Event28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2021 - Virtual, Online, Japan
Duration: Jun 29 2021Jul 2 2021

Publication series

NameProceedings of AM-FPD 2021 - 28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials

Conference

Conference28th International Workshop on Active-Matrix Flatpanel Displays and Devices: TFT Technologies and FPD Materials, AM-FPD 2021
Country/TerritoryJapan
CityVirtual, Online
Period6/29/217/2/21

All Science Journal Classification (ASJC) codes

  • Computer Graphics and Computer-Aided Design
  • Media Technology
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Fingerprint

Dive into the research topics of 'Low-Temperature Solid-Phase Crystallization of High-Sn Concentration SISn on Insulator'. Together they form a unique fingerprint.

Cite this