Low temperature synthesis of β-FeSi2 thin films by pulsed laser deposition

T. Yoshitake, T. Nagamoto, K. Nagayama

    Research output: Contribution to journalArticle

    2 Citations (Scopus)

    Abstract

    In this study, the β-FeSi2 phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.

    Original languageEnglish
    Pages (from-to)1755-1756
    Number of pages2
    JournalJournal of Materials Science Letters
    Volume18
    Issue number21
    DOIs
    Publication statusPublished - Nov 1 1999

    Fingerprint

    Adatoms
    Pulsed laser deposition
    Thin films
    Atoms
    Temperature
    1-dodecylpyridoxal

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)

    Cite this

    Low temperature synthesis of β-FeSi2 thin films by pulsed laser deposition. / Yoshitake, T.; Nagamoto, T.; Nagayama, K.

    In: Journal of Materials Science Letters, Vol. 18, No. 21, 01.11.1999, p. 1755-1756.

    Research output: Contribution to journalArticle

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    abstract = "In this study, the β-FeSi2 phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.",
    author = "T. Yoshitake and T. Nagamoto and K. Nagayama",
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