Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

Original languageEnglish
Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages313-315
Number of pages3
ISBN (Print)9781538637111
DOIs
Publication statusPublished - Jul 26 2018
Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
Duration: Mar 13 2018Mar 16 2018

Publication series

Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/TerritoryJapan
CityKobe
Period3/13/183/16/18

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Electronic, Optical and Magnetic Materials

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