Abstract
We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.
| Original language | English |
|---|---|
| Title of host publication | 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 313-315 |
| Number of pages | 3 |
| ISBN (Print) | 9781538637111 |
| DOIs | |
| Publication status | Published - Jul 26 2018 |
| Event | 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018 |
Publication series
| Name | 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings |
|---|
Other
| Other | 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 |
|---|---|
| Country | Japan |
| City | Kobe |
| Period | 3/13/18 → 3/16/18 |
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All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering
- Industrial and Manufacturing Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator. / Takahashi, Kouta; Ikenoue, Hiroshi; Sakashita, Mitsuo; Nakatsuka, Osamu; Zaima, Shigeaki; Kurosawa, Masashi.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 313-315 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator
AU - Takahashi, Kouta
AU - Ikenoue, Hiroshi
AU - Sakashita, Mitsuo
AU - Nakatsuka, Osamu
AU - Zaima, Shigeaki
AU - Kurosawa, Masashi
PY - 2018/7/26
Y1 - 2018/7/26
N2 - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.
AB - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.
UR - http://www.scopus.com/inward/record.url?scp=85051560239&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85051560239&partnerID=8YFLogxK
U2 - 10.1109/EDTM.2018.8421488
DO - 10.1109/EDTM.2018.8421488
M3 - Conference contribution
AN - SCOPUS:85051560239
SN - 9781538637111
T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
SP - 313
EP - 315
BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -