TY - GEN
T1 - Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator
AU - Takahashi, Kouta
AU - Ikenoue, Hiroshi
AU - Sakashita, Mitsuo
AU - Nakatsuka, Osamu
AU - Zaima, Shigeaki
AU - Kurosawa, Masashi
PY - 2018/7/26
Y1 - 2018/7/26
N2 - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.
AB - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.
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U2 - 10.1109/EDTM.2018.8421488
DO - 10.1109/EDTM.2018.8421488
M3 - Conference contribution
AN - SCOPUS:85051560239
SN - 9781538637111
T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
SP - 313
EP - 315
BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Y2 - 13 March 2018 through 16 March 2018
ER -