Low-threshold blue emission from first-order organic DFB laser using 2,7-bis[4-(N-carbazole)phenylvinyl]- 9,9′-spirobifluorene as active gain medium

Masaya Hirade, Hajime Nakanotani, Reiji Hattori, Akihiro Ikeda, Masayuki Yahiro, Chihaya Adachi

Research output: Contribution to journalArticle

Abstract

We demonstrate optically excited lasing by an organic semiconducting thin-film based on 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9′- spirobifluorene (spiro-SBCz) as an active gain medium with a first-order distributed feedback (DFB) reflector. We prepared DFB reflectors with periods from 132.5 to 145.00nm and grooves from 70 to 140nm depth by using electron-beam-lithography and plasma-etching techniques. The laser having a reflector with a 145.0nm period had a lasing threshold of 0.72±0.07 μJ=cm2, 83% lower than its threshold of amplified spontaneous emission (4.1±0.4 μJ=cm2).

Original languageEnglish
Pages (from-to)1-8
Number of pages8
JournalMolecular Crystals and Liquid Crystals
Volume504
Issue number1
DOIs
Publication statusPublished - Jan 1 2009

Fingerprint

Organic lasers
organic lasers
Distributed feedback lasers
carbazoles
distributed feedback lasers
reflectors
Semiconducting films
Feedback
thresholds
lasing
Plasma etching
Electron beam lithography
Spontaneous emission
plasma etching
Thin films
grooves
spontaneous emission
Lasers
lithography
electron beams

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Science(all)

Cite this

@article{9f6c0b48d3c54f52bfd953ddeb724bd7,
title = "Low-threshold blue emission from first-order organic DFB laser using 2,7-bis[4-(N-carbazole)phenylvinyl]- 9,9′-spirobifluorene as active gain medium",
abstract = "We demonstrate optically excited lasing by an organic semiconducting thin-film based on 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9′- spirobifluorene (spiro-SBCz) as an active gain medium with a first-order distributed feedback (DFB) reflector. We prepared DFB reflectors with periods from 132.5 to 145.00nm and grooves from 70 to 140nm depth by using electron-beam-lithography and plasma-etching techniques. The laser having a reflector with a 145.0nm period had a lasing threshold of 0.72±0.07 μJ=cm2, 83{\%} lower than its threshold of amplified spontaneous emission (4.1±0.4 μJ=cm2).",
author = "Masaya Hirade and Hajime Nakanotani and Reiji Hattori and Akihiro Ikeda and Masayuki Yahiro and Chihaya Adachi",
year = "2009",
month = "1",
day = "1",
doi = "10.1080/15421400902938928",
language = "English",
volume = "504",
pages = "1--8",
journal = "Molecular Crystals and Liquid Crystals",
issn = "1542-1406",
publisher = "Taylor and Francis Ltd.",
number = "1",

}

TY - JOUR

T1 - Low-threshold blue emission from first-order organic DFB laser using 2,7-bis[4-(N-carbazole)phenylvinyl]- 9,9′-spirobifluorene as active gain medium

AU - Hirade, Masaya

AU - Nakanotani, Hajime

AU - Hattori, Reiji

AU - Ikeda, Akihiro

AU - Yahiro, Masayuki

AU - Adachi, Chihaya

PY - 2009/1/1

Y1 - 2009/1/1

N2 - We demonstrate optically excited lasing by an organic semiconducting thin-film based on 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9′- spirobifluorene (spiro-SBCz) as an active gain medium with a first-order distributed feedback (DFB) reflector. We prepared DFB reflectors with periods from 132.5 to 145.00nm and grooves from 70 to 140nm depth by using electron-beam-lithography and plasma-etching techniques. The laser having a reflector with a 145.0nm period had a lasing threshold of 0.72±0.07 μJ=cm2, 83% lower than its threshold of amplified spontaneous emission (4.1±0.4 μJ=cm2).

AB - We demonstrate optically excited lasing by an organic semiconducting thin-film based on 2,7-bis[4-(N-carbazole)phenylvinyl]-9,9′- spirobifluorene (spiro-SBCz) as an active gain medium with a first-order distributed feedback (DFB) reflector. We prepared DFB reflectors with periods from 132.5 to 145.00nm and grooves from 70 to 140nm depth by using electron-beam-lithography and plasma-etching techniques. The laser having a reflector with a 145.0nm period had a lasing threshold of 0.72±0.07 μJ=cm2, 83% lower than its threshold of amplified spontaneous emission (4.1±0.4 μJ=cm2).

UR - http://www.scopus.com/inward/record.url?scp=79953131293&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79953131293&partnerID=8YFLogxK

U2 - 10.1080/15421400902938928

DO - 10.1080/15421400902938928

M3 - Article

AN - SCOPUS:79953131293

VL - 504

SP - 1

EP - 8

JO - Molecular Crystals and Liquid Crystals

JF - Molecular Crystals and Liquid Crystals

SN - 1542-1406

IS - 1

ER -