Low threshold field emission from high-quality cubic boron nitride films

Kungen Teii, Seiichiro Matsumoto

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

Field emission performance of materials with mixed sp 2/sp 3 phases often depends upon the phase composition at the surface. In this study, the emission performance of high-quality cubic boron nitride (cBN) films is studied in terms of phase purity. Thick cBN films consisting of micron-sized grains are prepared from boron trifluoride gas by chemical vapor deposition in a plasma jet and an inductively coupled plasma. Both the bulk and surface phase purities as well as crystallinities of cBN evaluated by visible and ultraviolet Raman spectroscopy, glancing-angle x-ray diffraction, and x-ray photoelectron spectroscopy are the highest when the film is deposited in a plasma jet under an optimized condition. The emission turn-on field decreases with increasing the phase purity, down to around 5 V/μm for the highest cBN purity, due to the larger field enhancement, while it is higher than 14 V/μm without cBN (sp 2-bonded hexagonal BN only). The results indicate that the total field enhancement for the high phase purity film is governed by the internal field amplification related to the surface coverage of more conductive cBN, rather than the external one related to the surface topology or roughness.

Original languageEnglish
Article number093728
JournalJournal of Applied Physics
Volume111
Issue number9
DOIs
Publication statusPublished - May 1 2012

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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