Low threshold field emission from nitrogen-incorporated carbon nanowalls

S. Shimada; K. Teii; M. Nakashima

doi:10.1016/j.diamond.2010.02.037

Low threshold field emission from nitrogen-incorporated carbon nanowalls

S. Shimada, K. Teii, M. Nakashima

Electrical Engineering Sciences

Research output: Contribution to journal › Article › peer-review

25 Citations (Scopus)

Abstract

Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (T_D) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher T_D show semi-metallic behavior. The emission turn-on field versus T_D has a very similar trend to the bulk resistivity versus T _D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10^{- 3} Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.

Original language	English
Pages (from-to)	956-959
Number of pages	4
Journal	Diamond and Related Materials
Volume	19
Issue number	7-9
DOIs	https://doi.org/10.1016/j.diamond.2010.02.037
Publication status	Published - Jul 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2010.02.037

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abstract = "Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called {"}carbon nanowalls (CNWs){"}, is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.",

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T1 - Low threshold field emission from nitrogen-incorporated carbon nanowalls

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AU - Teii, K.

AU - Nakashima, M.

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AB - Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.

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