Abstract
Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.
| Original language | English |
|---|---|
| Pages (from-to) | 956-959 |
| Number of pages | 4 |
| Journal | Diamond and Related Materials |
| Volume | 19 |
| Issue number | 7-9 |
| DOIs | |
| Publication status | Published - Jul 1 2010 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Electrical and Electronic Engineering
- Mechanical Engineering
- Physics and Astronomy(all)
- Chemistry(all)
Cite this
Low threshold field emission from nitrogen-incorporated carbon nanowalls. / Shimada, S.; Tsutsui, Kungen; Nakashima, M.
In: Diamond and Related Materials, Vol. 19, No. 7-9, 01.07.2010, p. 956-959.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Low threshold field emission from nitrogen-incorporated carbon nanowalls
AU - Shimada, S.
AU - Tsutsui, Kungen
AU - Nakashima, M.
PY - 2010/7/1
Y1 - 2010/7/1
N2 - Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.
AB - Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.
UR - http://www.scopus.com/inward/record.url?scp=77955231264&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77955231264&partnerID=8YFLogxK
U2 - 10.1016/j.diamond.2010.02.037
DO - 10.1016/j.diamond.2010.02.037
M3 - Article
VL - 19
SP - 956
EP - 959
JO - Diamond and Related Materials
JF - Diamond and Related Materials
SN - 0925-9635
IS - 7-9
ER -