Low threshold field emission from nitrogen-incorporated carbon nanowalls

S. Shimada, Kungen Tsutsui, M. Nakashima

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.

Original languageEnglish
Pages (from-to)956-959
Number of pages4
JournalDiamond and Related Materials
Volume19
Issue number7-9
DOIs
Publication statusPublished - Jul 1 2010

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Field emission
field emission
Nitrogen
Carbon
nitrogen
thresholds
carbon
electrical resistivity
Metals
conduction
Arrhenius plots
Graphite
Ohmic contacts
Surface potential
metals
Graphene
electric contacts
graphene
plots
trends

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Physics and Astronomy(all)
  • Chemistry(all)

Cite this

Low threshold field emission from nitrogen-incorporated carbon nanowalls. / Shimada, S.; Tsutsui, Kungen; Nakashima, M.

In: Diamond and Related Materials, Vol. 19, No. 7-9, 01.07.2010, p. 956-959.

Research output: Contribution to journalArticle

@article{1da6c625ff844290b3db4e0847ff764e,
title = "Low threshold field emission from nitrogen-incorporated carbon nanowalls",
abstract = "Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called {"}carbon nanowalls (CNWs){"}, is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.",
author = "S. Shimada and Kungen Tsutsui and M. Nakashima",
year = "2010",
month = "7",
day = "1",
doi = "10.1016/j.diamond.2010.02.037",
language = "English",
volume = "19",
pages = "956--959",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "7-9",

}

TY - JOUR

T1 - Low threshold field emission from nitrogen-incorporated carbon nanowalls

AU - Shimada, S.

AU - Tsutsui, Kungen

AU - Nakashima, M.

PY - 2010/7/1

Y1 - 2010/7/1

N2 - Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.

AB - Field emission performance of nitrogen-incorporated vertically-aligned graphene layers, so called "carbon nanowalls (CNWs)", is found to depend upon their electrical conduction properties. The CNW samples with n-type conduction exhibit near-ideal Ohmic contacts with various metals such as Cu, Ti, and Au, regardless of the work function of the metals. The high resistivity CNWs for lower deposition temperatures (TD) show semiconducting behavior in the Arrhenius plots, while the low resistivity CNWs for higher TD show semi-metallic behavior. The emission turn-on field versus TD has a very similar trend to the bulk resistivity versus T D, and is reduced down to about 3 V/μm when the resistivity reaches a minimum (3.0 × 10- 3 Ω cm). The lower turn-on field for semi-metallic CNWs is attributed to an upward shift of the emission level, which is responsible for a decrease in the surface potential barrier height for emission.

UR - http://www.scopus.com/inward/record.url?scp=77955231264&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77955231264&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2010.02.037

DO - 10.1016/j.diamond.2010.02.037

M3 - Article

VL - 19

SP - 956

EP - 959

JO - Diamond and Related Materials

JF - Diamond and Related Materials

SN - 0925-9635

IS - 7-9

ER -