Low-voltage and hysteresis-free N-type organic thin film transistor and complementary inverter with bilayer gate insulator

Yoshihide Fujisaki, Masashi Mamada, Daisuke Kumaki, Shizuo Tokito, Yoshiro Yamashita

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT) and a complementary inverter circuit using a thiazolothiazole derivative as an organic semiconductor (OSC). To achieve the low voltage and stable operation of the n-type OTFT, a bilayer structure consisting of a thin low-k polymer layer and a high-k Ta2O 5 layer was used and investigated as the gate insulator. Atomic force microscopy images of the OSC film on the hydrophobic polymer showed densely distributed small grains, and the corresponding OTFT exhibited hysteresis-free and excellent n-type performance, for example, an electron mobility of 0.23-0.35cm2 V-1 s-1. In addition, the n-type OTFT with a thinner polymer layer exhibited a low operating voltage of less than 10 V while maintaining excellent characteristics. A complementary inverter based on the thiazolothiazole derivative and pentacene was also fabricated using the bilayer gate insulator. The switching operation of the inverter was achieved at a low voltage of 5-10 V.

Original languageEnglish
Article number111504
JournalJapanese journal of applied physics
Volume48
Issue number11
DOIs
Publication statusPublished - Dec 1 2009

Fingerprint

Thin film transistors
low voltage
Hysteresis
transistors
hysteresis
insulators
Semiconducting organic compounds
organic semiconductors
Electric potential
thin films
polymers
Polymers
Derivatives
Electron mobility
electron mobility
Atomic force microscopy
atomic force microscopy
Networks (circuits)
electric potential

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Low-voltage and hysteresis-free N-type organic thin film transistor and complementary inverter with bilayer gate insulator. / Fujisaki, Yoshihide; Mamada, Masashi; Kumaki, Daisuke; Tokito, Shizuo; Yamashita, Yoshiro.

In: Japanese journal of applied physics, Vol. 48, No. 11, 111504, 01.12.2009.

Research output: Contribution to journalArticle

@article{161c58f3c44a4328a6a19c75ac09ac5a,
title = "Low-voltage and hysteresis-free N-type organic thin film transistor and complementary inverter with bilayer gate insulator",
abstract = "In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT) and a complementary inverter circuit using a thiazolothiazole derivative as an organic semiconductor (OSC). To achieve the low voltage and stable operation of the n-type OTFT, a bilayer structure consisting of a thin low-k polymer layer and a high-k Ta2O 5 layer was used and investigated as the gate insulator. Atomic force microscopy images of the OSC film on the hydrophobic polymer showed densely distributed small grains, and the corresponding OTFT exhibited hysteresis-free and excellent n-type performance, for example, an electron mobility of 0.23-0.35cm2 V-1 s-1. In addition, the n-type OTFT with a thinner polymer layer exhibited a low operating voltage of less than 10 V while maintaining excellent characteristics. A complementary inverter based on the thiazolothiazole derivative and pentacene was also fabricated using the bilayer gate insulator. The switching operation of the inverter was achieved at a low voltage of 5-10 V.",
author = "Yoshihide Fujisaki and Masashi Mamada and Daisuke Kumaki and Shizuo Tokito and Yoshiro Yamashita",
year = "2009",
month = "12",
day = "1",
doi = "10.1143/JJAP.48.111504",
language = "English",
volume = "48",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "11",

}

TY - JOUR

T1 - Low-voltage and hysteresis-free N-type organic thin film transistor and complementary inverter with bilayer gate insulator

AU - Fujisaki, Yoshihide

AU - Mamada, Masashi

AU - Kumaki, Daisuke

AU - Tokito, Shizuo

AU - Yamashita, Yoshiro

PY - 2009/12/1

Y1 - 2009/12/1

N2 - In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT) and a complementary inverter circuit using a thiazolothiazole derivative as an organic semiconductor (OSC). To achieve the low voltage and stable operation of the n-type OTFT, a bilayer structure consisting of a thin low-k polymer layer and a high-k Ta2O 5 layer was used and investigated as the gate insulator. Atomic force microscopy images of the OSC film on the hydrophobic polymer showed densely distributed small grains, and the corresponding OTFT exhibited hysteresis-free and excellent n-type performance, for example, an electron mobility of 0.23-0.35cm2 V-1 s-1. In addition, the n-type OTFT with a thinner polymer layer exhibited a low operating voltage of less than 10 V while maintaining excellent characteristics. A complementary inverter based on the thiazolothiazole derivative and pentacene was also fabricated using the bilayer gate insulator. The switching operation of the inverter was achieved at a low voltage of 5-10 V.

AB - In this paper, we report on a low-voltage-operation n-type organic thin film transistor (OTFT) and a complementary inverter circuit using a thiazolothiazole derivative as an organic semiconductor (OSC). To achieve the low voltage and stable operation of the n-type OTFT, a bilayer structure consisting of a thin low-k polymer layer and a high-k Ta2O 5 layer was used and investigated as the gate insulator. Atomic force microscopy images of the OSC film on the hydrophobic polymer showed densely distributed small grains, and the corresponding OTFT exhibited hysteresis-free and excellent n-type performance, for example, an electron mobility of 0.23-0.35cm2 V-1 s-1. In addition, the n-type OTFT with a thinner polymer layer exhibited a low operating voltage of less than 10 V while maintaining excellent characteristics. A complementary inverter based on the thiazolothiazole derivative and pentacene was also fabricated using the bilayer gate insulator. The switching operation of the inverter was achieved at a low voltage of 5-10 V.

UR - http://www.scopus.com/inward/record.url?scp=73849092011&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=73849092011&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.111504

DO - 10.1143/JJAP.48.111504

M3 - Article

AN - SCOPUS:73849092011

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 11

M1 - 111504

ER -