Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence

Rui Xu; Dingshuo Zhang; Junjie Si; Yihang Du; Qianqing Hu; Xiaoming Hao; Hong Zhao; Peiqing Cai; Qi Ai; Xin Yao; Yun Gao; Meiyi Zhu; Zenan Zhang; Muzhi Cai; Hin Wai Mo; Kentaro Harada; Zhizhen Ye; Xingliang Dai; Chihaya Adachi; Zugang Liu

doi:10.1021/acsenergylett.2c02471

Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence

Rui Xu, Dingshuo Zhang, Junjie Si, Yihang Du, Qianqing Hu, Xiaoming Hao, Hong Zhao, Peiqing Cai, Qi Ai, Xin Yao, Yun Gao, Meiyi Zhu, Zenan Zhang, Muzhi Cai, Hin Wai Mo, Kentaro Harada, Zhizhen Ye, Xingliang Dai, Chihaya Adachi, Zugang Liu

Functional Materials Chemistry

Research output: Contribution to journal › Article › peer-review

Abstract

White light-emitting diodes (WLEDs) based on copper iodides have attracted tremendous interest due to their broad emission and environmentally friendly nature. Cesium copper iodide is usually regarded as the emissive center in this type of LED. Here, we reveal that it is the in situ formed copper iodide complex, generated during the deposition of the electron transporting layer on cesium copper iodide films, that dominates the electroluminescence. It is also found that the narrow bandgap and widely distributed band-edge states of the complex facilitate the hole injection, resulting in low-voltage driving. Combining a modified hole injection layer to suppress the interfacial exciton quenching, an efficient broadband LED with a turn-on voltage of 2.3 V and a peak EQE of 4.6% was achieved. The driving voltages at 100 and 1000 cd m-2 are 2.9 and 4.9 V, respectively, both of which are the lowest among all reported Cu(I) complex-based broadband WLEDs.

Original language	English
Pages (from-to)	4408-4416
Number of pages	9
Journal	ACS Energy Letters
DOIs	https://doi.org/10.1021/acsenergylett.2c02471
Publication status	Accepted/In press - 2022

All Science Journal Classification (ASJC) codes

Chemistry (miscellaneous)
Renewable Energy, Sustainability and the Environment
Fuel Technology
Energy Engineering and Power Technology
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1021/acsenergylett.2c02471

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@article{a258054a09a44131857ab0867c085765,

title = "Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence",

abstract = "White light-emitting diodes (WLEDs) based on copper iodides have attracted tremendous interest due to their broad emission and environmentally friendly nature. Cesium copper iodide is usually regarded as the emissive center in this type of LED. Here, we reveal that it is the in situ formed copper iodide complex, generated during the deposition of the electron transporting layer on cesium copper iodide films, that dominates the electroluminescence. It is also found that the narrow bandgap and widely distributed band-edge states of the complex facilitate the hole injection, resulting in low-voltage driving. Combining a modified hole injection layer to suppress the interfacial exciton quenching, an efficient broadband LED with a turn-on voltage of 2.3 V and a peak EQE of 4.6% was achieved. The driving voltages at 100 and 1000 cd m-2 are 2.9 and 4.9 V, respectively, both of which are the lowest among all reported Cu(I) complex-based broadband WLEDs.",

author = "Rui Xu and Dingshuo Zhang and Junjie Si and Yihang Du and Qianqing Hu and Xiaoming Hao and Hong Zhao and Peiqing Cai and Qi Ai and Xin Yao and Yun Gao and Meiyi Zhu and Zenan Zhang and Muzhi Cai and Mo, {Hin Wai} and Kentaro Harada and Zhizhen Ye and Xingliang Dai and Chihaya Adachi and Zugang Liu",

note = "Funding Information: This work was financially supported by the National Natural Science Foundation of China (61905230, 52072355, 52102188, 11904345, 52103241, 61904160), the Key Research and Development Program of Zhejiang Province (2021C01030), Natural Science Foundation of Zhejiang Province (LQ21F040005, LQ19F040004), and the Young Elite Scientists Sponsorship Program by CAST (YESS20210444). Publisher Copyright: {\textcopyright} 2022 American Chemical Society.",

year = "2022",

doi = "10.1021/acsenergylett.2c02471",

language = "English",

pages = "4408--4416",

journal = "ACS Energy Letters",

issn = "2380-8195",

publisher = "American Chemical Society",

}

TY - JOUR

T1 - Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence

AU - Xu, Rui

AU - Zhang, Dingshuo

AU - Si, Junjie

AU - Du, Yihang

AU - Hu, Qianqing

AU - Hao, Xiaoming

AU - Zhao, Hong

AU - Cai, Peiqing

AU - Ai, Qi

AU - Yao, Xin

AU - Gao, Yun

AU - Zhu, Meiyi

AU - Zhang, Zenan

AU - Cai, Muzhi

AU - Mo, Hin Wai

AU - Harada, Kentaro

AU - Ye, Zhizhen

AU - Dai, Xingliang

AU - Adachi, Chihaya

AU - Liu, Zugang

N1 - Funding Information: This work was financially supported by the National Natural Science Foundation of China (61905230, 52072355, 52102188, 11904345, 52103241, 61904160), the Key Research and Development Program of Zhejiang Province (2021C01030), Natural Science Foundation of Zhejiang Province (LQ21F040005, LQ19F040004), and the Young Elite Scientists Sponsorship Program by CAST (YESS20210444). Publisher Copyright: © 2022 American Chemical Society.

PY - 2022

Y1 - 2022

N2 - White light-emitting diodes (WLEDs) based on copper iodides have attracted tremendous interest due to their broad emission and environmentally friendly nature. Cesium copper iodide is usually regarded as the emissive center in this type of LED. Here, we reveal that it is the in situ formed copper iodide complex, generated during the deposition of the electron transporting layer on cesium copper iodide films, that dominates the electroluminescence. It is also found that the narrow bandgap and widely distributed band-edge states of the complex facilitate the hole injection, resulting in low-voltage driving. Combining a modified hole injection layer to suppress the interfacial exciton quenching, an efficient broadband LED with a turn-on voltage of 2.3 V and a peak EQE of 4.6% was achieved. The driving voltages at 100 and 1000 cd m-2 are 2.9 and 4.9 V, respectively, both of which are the lowest among all reported Cu(I) complex-based broadband WLEDs.

AB - White light-emitting diodes (WLEDs) based on copper iodides have attracted tremendous interest due to their broad emission and environmentally friendly nature. Cesium copper iodide is usually regarded as the emissive center in this type of LED. Here, we reveal that it is the in situ formed copper iodide complex, generated during the deposition of the electron transporting layer on cesium copper iodide films, that dominates the electroluminescence. It is also found that the narrow bandgap and widely distributed band-edge states of the complex facilitate the hole injection, resulting in low-voltage driving. Combining a modified hole injection layer to suppress the interfacial exciton quenching, an efficient broadband LED with a turn-on voltage of 2.3 V and a peak EQE of 4.6% was achieved. The driving voltages at 100 and 1000 cd m-2 are 2.9 and 4.9 V, respectively, both of which are the lowest among all reported Cu(I) complex-based broadband WLEDs.

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U2 - 10.1021/acsenergylett.2c02471

DO - 10.1021/acsenergylett.2c02471

M3 - Article

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SP - 4408

EP - 4416

JO - ACS Energy Letters

JF - ACS Energy Letters

SN - 2380-8195

ER -

Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence

Abstract

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