Low-Voltage Driving Copper Iodide-Based Broadband Electroluminescence

Rui Xu, Dingshuo Zhang, Junjie Si, Yihang Du, Qianqing Hu, Xiaoming Hao, Hong Zhao, Peiqing Cai, Qi Ai, Xin Yao, Yun Gao, Meiyi Zhu, Zenan Zhang, Muzhi Cai, Hin Wai Mo, Kentaro Harada, Zhizhen Ye, Xingliang Dai, Chihaya Adachi, Zugang Liu

Research output: Contribution to journalArticlepeer-review

Abstract

White light-emitting diodes (WLEDs) based on copper iodides have attracted tremendous interest due to their broad emission and environmentally friendly nature. Cesium copper iodide is usually regarded as the emissive center in this type of LED. Here, we reveal that it is the in situ formed copper iodide complex, generated during the deposition of the electron transporting layer on cesium copper iodide films, that dominates the electroluminescence. It is also found that the narrow bandgap and widely distributed band-edge states of the complex facilitate the hole injection, resulting in low-voltage driving. Combining a modified hole injection layer to suppress the interfacial exciton quenching, an efficient broadband LED with a turn-on voltage of 2.3 V and a peak EQE of 4.6% was achieved. The driving voltages at 100 and 1000 cd m-2 are 2.9 and 4.9 V, respectively, both of which are the lowest among all reported Cu(I) complex-based broadband WLEDs.

Original languageEnglish
Pages (from-to)4408-4416
Number of pages9
JournalACS Energy Letters
DOIs
Publication statusAccepted/In press - 2022

All Science Journal Classification (ASJC) codes

  • Chemistry (miscellaneous)
  • Renewable Energy, Sustainability and the Environment
  • Fuel Technology
  • Energy Engineering and Power Technology
  • Materials Chemistry

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