Lower pressure limit of diamond growth in inductively coupled plasma

Kungen Tsutsui, Toyonobu Yoshida

Research output: Contribution to journalArticle

39 Citations (Scopus)

Abstract

A study of diamond growth at pressures below 20 mTorr by using an inductively coupled radio frequency plasma is presented. Emissive and Langmuir probes, and optical emission spectroscopy were used to examine the plasma, and deposits were obtained on single crystalline silicon and diamond substrates with controlling the bombarding ion energy by the sheath potential (Vsheath). A higher threshold of Vsheath that allowed diamond growth was found in the range of 11-19 V above 20 mTorr, while a shift down of the Vsheath threshold was observed below 10 mTorr, as confirmed by Raman spectroscopy and electron diffraction. The growth at 10 mTorr was successful only when Vsheath was reduced to 2 V, however, the growth at 5 mTorr was no longer possible even when V sheath was reduced to 2 V. Effects of the pressure decrease on the suppression of diamond growth below 10 mTorr were interpreted in terms of an increase in ion flux relative to radical flux as well as low radical density corresponding to the plasma density of approximately 2×1010cm-3.

Original languageEnglish
Pages (from-to)1864-1870
Number of pages7
JournalJournal of Applied Physics
Volume85
Issue number3
DOIs
Publication statusPublished - Jan 1 1999

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low pressure
diamonds
sheaths
thresholds
optical emission spectroscopy
electrostatic probes
plasma density
radio frequencies
ions
electron diffraction
Raman spectroscopy
deposits
retarding
probes
shift
silicon
diffraction
energy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lower pressure limit of diamond growth in inductively coupled plasma. / Tsutsui, Kungen; Yoshida, Toyonobu.

In: Journal of Applied Physics, Vol. 85, No. 3, 01.01.1999, p. 1864-1870.

Research output: Contribution to journalArticle

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