Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

Original languageEnglish
Title of host publicationLaser-Based Micro- and Nanoprocessing XIII
EditorsUdo Klotzbach, Akira Watanabe, Rainer Kling
PublisherSPIE
ISBN (Electronic)9781510624542
DOIs
Publication statusPublished - Jan 1 2019
EventLaser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, United States
Duration: Feb 5 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10906
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLaser-Based Micro- and Nanoprocessing XIII 2019
CountryUnited States
CitySan Francisco
Period2/5/192/7/19

Fingerprint

Thin-film Transistor
Excimer Laser
Excimer lasers
Thin film transistors
Polysilicon
excimer lasers
Fabrication
transistors
Doping (additives)
Laser
fabrication
Lasers
phosphoric acid
Electrical Properties
Phosphoric acid
Resistivity
Laser beam effects
thin films
carrier mobility
Irradiation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2019). Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. In U. Klotzbach, A. Watanabe, & R. Kling (Eds.), Laser-Based Micro- and Nanoprocessing XIII [109060J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10906). SPIE. https://doi.org/10.1117/12.2509141

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. / Imokawa, Kaname; Tanaka, Nozomu; Suwa, Akira; Nakamura, Daisuke; Sadoh, Taizoh; Goto, Tetsuya; Ikenoue, Hiroshi.

Laser-Based Micro- and Nanoprocessing XIII. ed. / Udo Klotzbach; Akira Watanabe; Rainer Kling. SPIE, 2019. 109060J (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10906).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Imokawa, K, Tanaka, N, Suwa, A, Nakamura, D, Sadoh, T, Goto, T & Ikenoue, H 2019, Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. in U Klotzbach, A Watanabe & R Kling (eds), Laser-Based Micro- and Nanoprocessing XIII., 109060J, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10906, SPIE, Laser-Based Micro- and Nanoprocessing XIII 2019, San Francisco, United States, 2/5/19. https://doi.org/10.1117/12.2509141
Imokawa K, Tanaka N, Suwa A, Nakamura D, Sadoh T, Goto T et al. Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. In Klotzbach U, Watanabe A, Kling R, editors, Laser-Based Micro- and Nanoprocessing XIII. SPIE. 2019. 109060J. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.2509141
Imokawa, Kaname ; Tanaka, Nozomu ; Suwa, Akira ; Nakamura, Daisuke ; Sadoh, Taizoh ; Goto, Tetsuya ; Ikenoue, Hiroshi. / Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. Laser-Based Micro- and Nanoprocessing XIII. editor / Udo Klotzbach ; Akira Watanabe ; Rainer Kling. SPIE, 2019. (Proceedings of SPIE - The International Society for Optical Engineering).
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