Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa; Nozomu Tanaka; Akira Suwa; Daisuke Nakamura; Taizoh Sadoh; Tetsuya Goto; Hiroshi Ikenoue

doi:10.1117/12.2509141

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm² /Vs, 1.5×10¹⁸ cm^-3, 18.1 %, and 8.5 × 10^-5Ω.cm², respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

Original language	English
Title of host publication	Laser-Based Micro- and Nanoprocessing XIII
Editors	Udo Klotzbach, Akira Watanabe, Rainer Kling
Publisher	SPIE
ISBN (Electronic)	9781510624542
DOIs	https://doi.org/10.1117/12.2509141
Publication status	Published - 2019
Event	Laser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, United States Duration: Feb 5 2019 → Feb 7 2019

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	10906
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Laser-Based Micro- and Nanoprocessing XIII 2019
Country/Territory	United States
City	San Francisco
Period	2/5/19 → 2/7/19

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.2509141

Cite this

Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2019). Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. In U. Klotzbach, A. Watanabe, & R. Kling (Eds.), Laser-Based Micro- and Nanoprocessing XIII [109060J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10906). SPIE. https://doi.org/10.1117/12.2509141

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. / Imokawa, Kaname; Tanaka, Nozomu; Suwa, Akira et al.
Laser-Based Micro- and Nanoprocessing XIII. ed. / Udo Klotzbach; Akira Watanabe; Rainer Kling. SPIE, 2019. 109060J (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10906).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Imokawa, K, Tanaka, N, Suwa, A, Nakamura, D , Sadoh, T, Goto, T & Ikenoue, H 2019, Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. in U Klotzbach, A Watanabe & R Kling (eds), Laser-Based Micro- and Nanoprocessing XIII., 109060J, Proceedings of SPIE - The International Society for Optical Engineering, vol. 10906, SPIE, Laser-Based Micro- and Nanoprocessing XIII 2019, San Francisco, United States, 2/5/19. https://doi.org/10.1117/12.2509141

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abstract = "The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.",

author = "Kaname Imokawa and Nozomu Tanaka and Akira Suwa and Daisuke Nakamura and Taizoh Sadoh and Tetsuya Goto and Hiroshi Ikenoue",

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AU - Imokawa, Kaname

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AU - Sadoh, Taizoh

AU - Goto, Tetsuya

AU - Ikenoue, Hiroshi

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N2 - The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

AB - The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

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BT - Laser-Based Micro- and Nanoprocessing XIII

A2 - Klotzbach, Udo

A2 - Watanabe, Akira

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Y2 - 5 February 2019 through 7 February 2019

ER -

Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

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