Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The electrical properties of poly-Si thin films doped using KrF excimer laser irradiation with a phosphoric-acid coating were investigated. After laser doping, the mobility, carrier concentration, activation ratio, and contact resistivity of the poly-Si were found to be 61 cm2 /Vs, 1.5×1018 cm-3, 18.1 %, and 8.5 × 10-5Ω.cm2, respectively. Additionally, the operation of a bottom gate transistor fabricated using laser doping was realized and is described herein.

Original languageEnglish
Title of host publicationLaser-Based Micro- and Nanoprocessing XIII
EditorsUdo Klotzbach, Akira Watanabe, Rainer Kling
PublisherSPIE
ISBN (Electronic)9781510624542
DOIs
Publication statusPublished - Jan 1 2019
EventLaser-Based Micro- and Nanoprocessing XIII 2019 - San Francisco, United States
Duration: Feb 5 2019Feb 7 2019

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume10906
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceLaser-Based Micro- and Nanoprocessing XIII 2019
CountryUnited States
CitySan Francisco
Period2/5/192/7/19

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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  • Cite this

    Imokawa, K., Tanaka, N., Suwa, A., Nakamura, D., Sadoh, T., Goto, T., & Ikenoue, H. (2019). Lowerature and low-cost excimer laser doping for poly-Si thin-film transistor fabrication. In U. Klotzbach, A. Watanabe, & R. Kling (Eds.), Laser-Based Micro- and Nanoprocessing XIII [109060J] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 10906). SPIE. https://doi.org/10.1117/12.2509141