LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System

Tetsuya Goto, Kaori Saito, Fuminobu Imaizumi, Makoto Hatanaka, Masami Takimoto, Michinobu Mizumura, Jun Gotoh, Hiroshi Ikenoue, Shigetoshi Sugawa

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7 Citations (Scopus)

Abstract

Selective laser annealing system was developed to realize fabrications of low-temperature poly-Si thin-film transistors (TFTs) even for large substrate, while the conventional excimer laser annealing system has the limitation in substrate size due to the difficulty in obtaining uniform beam line. In this paper, this new system was applied to fabricate poly-Si TFTs, using two laser exposure methods such as the static exposure and the scan exposure. Grain size increased as the laser energy density increased, and TFTs with the field-effect mobility larger than 100 cm2V-1s-1 with the ON- OFF ratio of drain current of approximately 106 could be obtained. Furthermore, for the scan exposure, periodic grain structure was observed resulting from the lateral solidification. In this condition, variations of electrical properties of TFT could be reduced compared to the case of the static exposure.

Original languageEnglish
Article number8395300
Pages (from-to)3250-3256
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume65
Issue number8
DOIs
Publication statusPublished - Aug 2018

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Goto, T., Saito, K., Imaizumi, F., Hatanaka, M., Takimoto, M., Mizumura, M., ... Sugawa, S. (2018). LTPS Thin-Film Transistors Fabricated Using New Selective Laser Annealing System. IEEE Transactions on Electron Devices, 65(8), 3250-3256. [8395300]. https://doi.org/10.1109/TED.2018.2846412