Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.
|Journal||Applied Physics Letters|
|Publication status||Published - 2006|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)