Luminescence from Nd- and Dy-ion-implanted 4H-SiC

Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, Teruaki Motooka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.

Original languageEnglish
Article number191904
JournalApplied Physics Letters
Volume88
Issue number19
DOIs
Publication statusPublished - May 23 2006

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dysprosium
neodymium
cathodoluminescence
luminescence
photoluminescence
oxidation
ions
ligands
annealing

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Luminescence from Nd- and Dy-ion-implanted 4H-SiC. / Kawai, Shinji; Masaki, Takayoshi; Kato, Yoshimine; Motooka, Teruaki.

In: Applied Physics Letters, Vol. 88, No. 19, 191904, 23.05.2006.

Research output: Contribution to journalArticle

Kawai, Shinji ; Masaki, Takayoshi ; Kato, Yoshimine ; Motooka, Teruaki. / Luminescence from Nd- and Dy-ion-implanted 4H-SiC. In: Applied Physics Letters. 2006 ; Vol. 88, No. 19.
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