Luminescence from Nd- and Dy-ion-implanted 4H-SiC

Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, Teruaki Motooka

    Research output: Contribution to journalArticlepeer-review

    7 Citations (Scopus)

    Abstract

    Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.

    Original languageEnglish
    Article number191904
    JournalApplied Physics Letters
    Volume88
    Issue number19
    DOIs
    Publication statusPublished - 2006

    All Science Journal Classification (ASJC) codes

    • Physics and Astronomy (miscellaneous)

    Fingerprint

    Dive into the research topics of 'Luminescence from Nd- and Dy-ion-implanted 4H-SiC'. Together they form a unique fingerprint.

    Cite this