Luminescence from Nd- and Dy-ion-implanted 4H-SiC

Shinji Kawai; Takayoshi Masaki; Yoshimine Kato; Teruaki Motooka

doi:10.1063/1.2202691

Luminescence from Nd- and Dy-ion-implanted 4H-SiC

Shinji Kawai, Takayoshi Masaki, Yoshimine Kato, Teruaki Motooka

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Abstract

Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.

Original language	English
Article number	191904
Journal	Applied Physics Letters
Volume	88
Issue number	19
DOIs	https://doi.org/10.1063/1.2202691
Publication status	Published - 2006

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.2202691

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@article{307af9f8678f4b8ba5b60f860c548150,

title = "Luminescence from Nd- and Dy-ion-implanted 4H-SiC",

abstract = "Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.",

author = "Shinji Kawai and Takayoshi Masaki and Yoshimine Kato and Teruaki Motooka",

year = "2006",

doi = "10.1063/1.2202691",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "19",

}

TY - JOUR

T1 - Luminescence from Nd- and Dy-ion-implanted 4H-SiC

AU - Kawai, Shinji

AU - Masaki, Takayoshi

AU - Kato, Yoshimine

AU - Motooka, Teruaki

PY - 2006

Y1 - 2006

N2 - Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.

AB - Cathodoluminescence (CL) and photoluminescence (PL) properties are studied on neodymium (Nd)- and dysprosium (Dy)-ion-implanted 4H-SiC. No appreciable CL and PL can be observed for all as-implanted samples. Strong visible CL due to Nd3+ and Dy3+ is observed only after rapid thermal annealing at 1500 °C followed by thermal oxidations at 860 °C for 720 min. On the other hand, near infrared PL is observed only from Nd-implanted 4H-SiC without thermal oxidation. It is found from the CL spectra observed after thermal oxidation that the ligand field effects on Nd3+ are strong, while those on Dy3+ are weak.

UR - http://www.scopus.com/inward/record.url?scp=33646693621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33646693621&partnerID=8YFLogxK

U2 - 10.1063/1.2202691

DO - 10.1063/1.2202691

M3 - Article

AN - SCOPUS:33646693621

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

M1 - 191904

ER -

Luminescence from Nd- and Dy-ion-implanted 4H-SiC

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