Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve

H. Asada; K. Matsuyama; Y. Hosokawa; K. Taniguchi; H. Asada

doi:10.1109/20.706378

Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve

H. Asada, K. Matsuyama, Y. Hosokawa, K. Taniguchi, H. Asada

Electronic Devices

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

The evaporated NiFe/Co/Cu/Co spin-valve strips to the 0.2 μm width were successfully fabricated by the Ar ion-milling through the negative type resist mask exposed by electron beam lithography, which is the simple fabrication method free from the deposition process limitation and multilayer materials. The size effect on the magnetization switching behavior was investigated by measuring the magnetoresistance (MR) change in the nanostructured strips with various widths on the same glass substrate. The Barkhausen like jump, which suggests the irreversible switching of the micro-domain, was observed in the 0.3 μm strip in the MR hysteresis. A quite different switching behavior was observed in the 0.2 μm width strip, which presented the drastically steep switching within S Oe in both magnetic layers and demonstrated the well defined quantization of the magnetization direction along the longitudinal direction.

Original language	English
Pages (from-to)	1102-1104
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	34
Issue number	4 PART 1
DOIs	https://doi.org/10.1109/20.706378
Publication status	Published - 1998

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{a6496fffda2842dfbca9bcaf5c620938,

title = "Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve",

abstract = "The evaporated NiFe/Co/Cu/Co spin-valve strips to the 0.2 μm width were successfully fabricated by the Ar ion-milling through the negative type resist mask exposed by electron beam lithography, which is the simple fabrication method free from the deposition process limitation and multilayer materials. The size effect on the magnetization switching behavior was investigated by measuring the magnetoresistance (MR) change in the nanostructured strips with various widths on the same glass substrate. The Barkhausen like jump, which suggests the irreversible switching of the micro-domain, was observed in the 0.3 μm strip in the MR hysteresis. A quite different switching behavior was observed in the 0.2 μm width strip, which presented the drastically steep switching within S Oe in both magnetic layers and demonstrated the well defined quantization of the magnetization direction along the longitudinal direction.",

author = "H. Asada and K. Matsuyama and Y. Hosokawa and K. Taniguchi and H. Asada",

year = "1998",

doi = "10.1109/20.706378",

language = "English",

volume = "34",

pages = "1102--1104",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4 PART 1",

}

TY - JOUR

T1 - Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve

AU - Asada, H.

AU - Matsuyama, K.

AU - Hosokawa, Y.

AU - Taniguchi, K.

AU - Asada, H.

PY - 1998

Y1 - 1998

N2 - The evaporated NiFe/Co/Cu/Co spin-valve strips to the 0.2 μm width were successfully fabricated by the Ar ion-milling through the negative type resist mask exposed by electron beam lithography, which is the simple fabrication method free from the deposition process limitation and multilayer materials. The size effect on the magnetization switching behavior was investigated by measuring the magnetoresistance (MR) change in the nanostructured strips with various widths on the same glass substrate. The Barkhausen like jump, which suggests the irreversible switching of the micro-domain, was observed in the 0.3 μm strip in the MR hysteresis. A quite different switching behavior was observed in the 0.2 μm width strip, which presented the drastically steep switching within S Oe in both magnetic layers and demonstrated the well defined quantization of the magnetization direction along the longitudinal direction.

AB - The evaporated NiFe/Co/Cu/Co spin-valve strips to the 0.2 μm width were successfully fabricated by the Ar ion-milling through the negative type resist mask exposed by electron beam lithography, which is the simple fabrication method free from the deposition process limitation and multilayer materials. The size effect on the magnetization switching behavior was investigated by measuring the magnetoresistance (MR) change in the nanostructured strips with various widths on the same glass substrate. The Barkhausen like jump, which suggests the irreversible switching of the micro-domain, was observed in the 0.3 μm strip in the MR hysteresis. A quite different switching behavior was observed in the 0.2 μm width strip, which presented the drastically steep switching within S Oe in both magnetic layers and demonstrated the well defined quantization of the magnetization direction along the longitudinal direction.

UR - http://www.scopus.com/inward/record.url?scp=0032118822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0032118822&partnerID=8YFLogxK

U2 - 10.1109/20.706378

DO - 10.1109/20.706378

M3 - Article

AN - SCOPUS:0032118822

SN - 0018-9464

VL - 34

SP - 1102

EP - 1104

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 4 PART 1

ER -

Magnetization switching behavior in nanostructured NiFe/Co/Cu/Co spin-valve

Abstract

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