We report on the realization of high performance solution-processed ambipolar organic transistors based on a quinoidal oligothiophene derivative. The devices show hole and electron field-effect mobilities in air as high as 0.1 and 0.006 cm2 V-1 s-1, respectively, and can be converted from ambipolar p-type dominant to n-type transistors by thermal annealing. The conversion of the majority carrier type is assigned to strong variations in molecular packing. The demonstration of complementary flexible inverters suggests an effective strategy for patterning lateral pn-bipolar structures in solution-processed thin films made from a monolithic ambipolar organic semiconductor.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)