Manipulated growth of GaAs nanowires: Controllable crystal quality and growth orientations via a supersaturation-controlled engineering process

Ning Han, Fengyun Wang, Jared J. Hou, Senpo Yip, Hao Lin, Ming Fang, Fei Xiu, Xiaoling Shi, Takfu Hung, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

46 Citations (Scopus)

Abstract

Controlling the crystal quality and growth orientation of high performance III-V compound semiconductor nanowires (NWs) in a large-scale synthesis is still challenging, which could restrict the implementation of nanowires for practical applications. Here we present a facile approach to control the crystal structure, defects, orientation, growth rate and density of GaAs NWs via a supersaturation-controlled engineering process by tailoring the chemical composition and dimension of starting AuxGay catalysts. For the high Ga supersaturation (catalyst diameter < 40 nm), NWs can be manipulated to grow unidirectionally along 〈111〉 with the pure zinc blende phase with a high growth rate, density and minimal amount of defect concentration utilizing the low-melting-point catalytic alloys (AuGa, Au 2Ga, and Au7Ga3 with Ga atomic concentration > 30%), whereas for the low Ga supersaturation (catalyst diameter > 40 nm), NWs are grown inevitably with a mixed crystal orientation and high concentration of defects from high-melting-point alloys (Au7Ga 2 with Ga atomic concentration < 30%). In addition to the complicated control of processing parameters, the ability to tune the composition of catalytic alloys by tailoring the starting Au film thickness demonstrates a versatile approach to control the crystal quality and orientation for the uniform NW growth.

Original languageEnglish
Pages (from-to)6243-6249
Number of pages7
JournalCrystal Growth and Design
Volume12
Issue number12
DOIs
Publication statusPublished - Dec 5 2012
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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