TY - JOUR
T1 - Manipulation of Antiferromagnetic Spin Using Tunable Parasitic Magnetization in Magnetoelectric Antiferromagnet
AU - Nozaki, Tomohiro
AU - Al-Mahdawi, Muftah
AU - Shiokawa, Yohei
AU - Pati, Satya Prakash
AU - Ye, Shujun
AU - Kotani, Yoshinori
AU - Toyoki, Kentaro
AU - Nakamura, Tetsuya
AU - Suzuki, Motohiro
AU - Yonemura, Syougo
AU - Shibata, Tatsuo
AU - Sahashi, Masashi
N1 - Funding Information:
The authors would like to thank H. Imamura for fruitful discussion. The XAS and XMCD experiments were performed at the SPring-8 synchrotron radiation facility with the approval of JASRI (Proposal No. 2015B1006, 2016A1404, and 2016A1030). This work was partly funded by the ImPACT Program of Council for Science, Technology and Innovation (Cabinet Office, Japan Government) and JSPS KAKENHI Grant Number 16H05975.
Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/12
Y1 - 2018/12
N2 - Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr2O3 is one of the few antiferromagnets that can achieve 180° manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr2O3, with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr2O3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr2O3/Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.
AB - Antiferromagnets and ferrimagnets with a low net magnetic moment are key components for future spintronic devices because they enable high-integration and high-speed (on the order of THz) operations. Cr2O3 is one of the few antiferromagnets that can achieve 180° manipulation of its spin by electrical means. In this study, the authors developed a new functional material, Cr2O3, with tunable parasitic magnetization. The authors demonstrate both magnitude and direction tunability of parasitic magnetization in Cr2O3 thin films by doping. A sublattice magnetization reduction and displacement-induced nonequivalent Cr moments by site-selective substitution of nonmagnetic elements are inferred to be the origin of the parasitic magnetization. By utilizing the tunable parasitic magnetization, the authors demonstrate the manipulation of antiferromagnetic single domain. In addition, the authors confirm the low-electric-field switching ability of the antiferromagnetic spin in a doped Cr2O3/Co exchange coupling system. Such tunable parasitic magnetization enables easy manipulation and detection of antiferromagnetic spin and provides a platform for further understanding of antiferromagnets and research opportunities in innovative spintronics device applications.
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U2 - 10.1002/pssr.201800366
DO - 10.1002/pssr.201800366
M3 - Letter
AN - SCOPUS:85054794944
VL - 12
JO - Physica Status Solidi - Rapid Research Letters
JF - Physica Status Solidi - Rapid Research Letters
SN - 1862-6254
IS - 12
M1 - 1800366
ER -