Maskless bumping by electroless plating for high pin count, thin, and low cost microcircuits

Koji Yamakawa, Kaoru Koiwa, Yoshimi Hisatsune, Michihiko Inaba, Nobuo Iwase

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

Without using a photolithographic process, a maskless bumping method has been achieved by palladium activation, nickel electroless plating, and ultrasonic soldering. A palladium chloride solution was developed for selective deposition. The average bump shear strength was 26.8 g/bump; this was maintained after 1000 hours at 150°C and after 300 thermal cycles. Nickel diffusion into the aluminum pads by 150-450°C annealing resulted in high adhesion strength and low electrical contact resistance. The bump structures were analyzed by AES (auger electron spectrometer), SIMS (secondary ion mass spectrometer), XPS (X ray photo spectrometer), and XRD (X ray diffractometer). The bumps were applied to high power transistors, LCD driver LSIs, and ASICs. Additionally, 376 pin count, 50 micrometer pitch bumps were successfully fabricated.

Original languageEnglish
Pages (from-to)69-84
Number of pages16
JournalThe International journal for hybrid microelectronics
Volume13
Issue number3
Publication statusPublished - Sep 1 1990
Externally publishedYes

Fingerprint

Electroless plating
Palladium
Spectrometers
Nickel plating
X rays
Bond strength (materials)
Soldering
Diffractometers
Mass spectrometers
Contact resistance
Application specific integrated circuits
Nickel
Aluminum
Liquid crystal displays
Shear strength
Costs
Ultrasonics
Chemical activation
Annealing
Ions

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Maskless bumping by electroless plating for high pin count, thin, and low cost microcircuits. / Yamakawa, Koji; Koiwa, Kaoru; Hisatsune, Yoshimi; Inaba, Michihiko; Iwase, Nobuo.

In: The International journal for hybrid microelectronics, Vol. 13, No. 3, 01.09.1990, p. 69-84.

Research output: Contribution to journalArticle

@article{1ae6163d622c46d78d0d706398aa252c,
title = "Maskless bumping by electroless plating for high pin count, thin, and low cost microcircuits",
abstract = "Without using a photolithographic process, a maskless bumping method has been achieved by palladium activation, nickel electroless plating, and ultrasonic soldering. A palladium chloride solution was developed for selective deposition. The average bump shear strength was 26.8 g/bump; this was maintained after 1000 hours at 150°C and after 300 thermal cycles. Nickel diffusion into the aluminum pads by 150-450°C annealing resulted in high adhesion strength and low electrical contact resistance. The bump structures were analyzed by AES (auger electron spectrometer), SIMS (secondary ion mass spectrometer), XPS (X ray photo spectrometer), and XRD (X ray diffractometer). The bumps were applied to high power transistors, LCD driver LSIs, and ASICs. Additionally, 376 pin count, 50 micrometer pitch bumps were successfully fabricated.",
author = "Koji Yamakawa and Kaoru Koiwa and Yoshimi Hisatsune and Michihiko Inaba and Nobuo Iwase",
year = "1990",
month = "9",
day = "1",
language = "English",
volume = "13",
pages = "69--84",
journal = "The International journal for hybrid microelectronics",
issn = "1551-4897",
publisher = "IMAPS-International Microelectronics and Packaging Society",
number = "3",

}

TY - JOUR

T1 - Maskless bumping by electroless plating for high pin count, thin, and low cost microcircuits

AU - Yamakawa, Koji

AU - Koiwa, Kaoru

AU - Hisatsune, Yoshimi

AU - Inaba, Michihiko

AU - Iwase, Nobuo

PY - 1990/9/1

Y1 - 1990/9/1

N2 - Without using a photolithographic process, a maskless bumping method has been achieved by palladium activation, nickel electroless plating, and ultrasonic soldering. A palladium chloride solution was developed for selective deposition. The average bump shear strength was 26.8 g/bump; this was maintained after 1000 hours at 150°C and after 300 thermal cycles. Nickel diffusion into the aluminum pads by 150-450°C annealing resulted in high adhesion strength and low electrical contact resistance. The bump structures were analyzed by AES (auger electron spectrometer), SIMS (secondary ion mass spectrometer), XPS (X ray photo spectrometer), and XRD (X ray diffractometer). The bumps were applied to high power transistors, LCD driver LSIs, and ASICs. Additionally, 376 pin count, 50 micrometer pitch bumps were successfully fabricated.

AB - Without using a photolithographic process, a maskless bumping method has been achieved by palladium activation, nickel electroless plating, and ultrasonic soldering. A palladium chloride solution was developed for selective deposition. The average bump shear strength was 26.8 g/bump; this was maintained after 1000 hours at 150°C and after 300 thermal cycles. Nickel diffusion into the aluminum pads by 150-450°C annealing resulted in high adhesion strength and low electrical contact resistance. The bump structures were analyzed by AES (auger electron spectrometer), SIMS (secondary ion mass spectrometer), XPS (X ray photo spectrometer), and XRD (X ray diffractometer). The bumps were applied to high power transistors, LCD driver LSIs, and ASICs. Additionally, 376 pin count, 50 micrometer pitch bumps were successfully fabricated.

UR - http://www.scopus.com/inward/record.url?scp=0025480202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025480202&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0025480202

VL - 13

SP - 69

EP - 84

JO - The International journal for hybrid microelectronics

JF - The International journal for hybrid microelectronics

SN - 1551-4897

IS - 3

ER -