Maskless Mn implantation in GaAs using focused Mn ion beam

M. Itou, M. Kasai, Takashi Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, K. Gamo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.

Original languageEnglish
Pages (from-to)1013-1017
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 1 2003
Externally publishedYes
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

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Hall resistance
Ion implantation
Ion beams
ion implantation
implantation
ion beams
mesas
Ion sources
liquid metals
Liquid metals
Molecular beam epitaxy
ion sources
Hysteresis
Argon
molecular beam epitaxy
hysteresis
argon
Hydrogen
Geometry
hydrogen

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

Cite this

Maskless Mn implantation in GaAs using focused Mn ion beam. / Itou, M.; Kasai, M.; Kimura, Takashi; Yanagisawa, J.; Wakaya, F.; Yuba, Y.; Gamo, K.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 1013-1017.

Research output: Contribution to journalConference article

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T1 - Maskless Mn implantation in GaAs using focused Mn ion beam

AU - Itou, M.

AU - Kasai, M.

AU - Kimura, Takashi

AU - Yanagisawa, J.

AU - Wakaya, F.

AU - Yuba, Y.

AU - Gamo, K.

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N2 - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.

AB - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.

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