Abstract
Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 1013-1017 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 206 |
| DOIs | |
| Publication status | Published - May 1 2003 |
| Externally published | Yes |
| Event | 13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: Sep 1 2002 → Sep 6 2002 |
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All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation
Cite this
Maskless Mn implantation in GaAs using focused Mn ion beam. / Itou, M.; Kasai, M.; Kimura, Takashi; Yanagisawa, J.; Wakaya, F.; Yuba, Y.; Gamo, K.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 206, 01.05.2003, p. 1013-1017.Research output: Contribution to journal › Conference article
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TY - JOUR
T1 - Maskless Mn implantation in GaAs using focused Mn ion beam
AU - Itou, M.
AU - Kasai, M.
AU - Kimura, Takashi
AU - Yanagisawa, J.
AU - Wakaya, F.
AU - Yuba, Y.
AU - Gamo, K.
PY - 2003/5/1
Y1 - 2003/5/1
N2 - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
AB - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
UR - http://www.scopus.com/inward/record.url?scp=0038750777&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0038750777&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(03)00924-8
DO - 10.1016/S0168-583X(03)00924-8
M3 - Conference article
AN - SCOPUS:0038750777
VL - 206
SP - 1013
EP - 1017
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
ER -