TY - JOUR
T1 - Maskless Mn implantation in GaAs using focused Mn ion beam
AU - Itou, M.
AU - Kasai, M.
AU - Kimura, T.
AU - Yanagisawa, J.
AU - Wakaya, F.
AU - Yuba, Y.
AU - Gamo, K.
N1 - Funding Information:
The authors would like to thank Mr. K. Kawasaki for his valuable technical assistance. This work was supported in part by a Grant-in-Aid for Scientific Research from the Ministry of Education, Science, Sports and Culture, Japan. One of the authors (J.Y.) is grateful to the Murata Science Foundation for financial support.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2003/5
Y1 - 2003/5
N2 - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
AB - Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
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U2 - 10.1016/S0168-583X(03)00924-8
DO - 10.1016/S0168-583X(03)00924-8
M3 - Conference article
AN - SCOPUS:0038750777
VL - 206
SP - 1013
EP - 1017
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
T2 - 13th International conference on Ion beam modification of Mate
Y2 - 1 September 2002 through 6 September 2002
ER -