Maskless Mn implantation in GaAs using focused Mn ion beam

M. Itou, M. Kasai, T. Kimura, J. Yanagisawa, F. Wakaya, Y. Yuba, K. Gamo

Research output: Contribution to journalConference article

2 Citations (Scopus)

Abstract

Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.

Original languageEnglish
Pages (from-to)1013-1017
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume206
DOIs
Publication statusPublished - May 1 2003
Externally publishedYes
Event13th International conference on Ion beam modification of Mate - Kobe, Japan
Duration: Sep 1 2002Sep 6 2002

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Instrumentation

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