Abstract
Fifteen kiloelectronvolts focused Mn ion beam was implanted on molecular beam epitaxy-grown Si-δ-doped GaAs which was mesa-etched to form Hall-bar geometry and annealed at 840 °C for 10 s in hydrogen and argon mixed gas ambient. Au-Si-Mn liquid metal alloy ion source was fabricated to perform both Mn and Si ion implantation. From the Hall resistance measurement at 77 K, non-linear behavior and hysteresis were observed in the Hall resistance in the Mn implanted region. The present result indicates that a ferromagnetic layer is formed in GaAs by the Mn ion implantation.
| Original language | English |
|---|---|
| Pages (from-to) | 1013-1017 |
| Number of pages | 5 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 206 |
| DOIs | |
| Publication status | Published - May 1 2003 |
| Externally published | Yes |
| Event | 13th International conference on Ion beam modification of Mate - Kobe, Japan Duration: Sep 1 2002 → Sep 6 2002 |
All Science Journal Classification (ASJC) codes
- Nuclear and High Energy Physics
- Instrumentation
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Itou, M., Kasai, M., Kimura, T., Yanagisawa, J., Wakaya, F., Yuba, Y., & Gamo, K. (2003). Maskless Mn implantation in GaAs using focused Mn ion beam. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, 206, 1013-1017. https://doi.org/10.1016/S0168-583X(03)00924-8