Abstract
In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.
| Original language | English |
|---|---|
| Journal | Surface and Coatings Technology |
| Volume | 228 |
| Issue number | SUPPL.1 |
| DOIs | |
| Publication status | Published - Aug 15 2013 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Materials Chemistry
Cite this
Mass density control of carbon films deposited by H-assisted plasma CVD method. / Urakawa, Tatsuya; Matsuzaki, Hidehumi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunori; Shiratani, Masaharu; Setsuhara, Yuichi; Sekine, Makoto; Hori, Masaru.
In: Surface and Coatings Technology, Vol. 228, No. SUPPL.1, 15.08.2013.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Mass density control of carbon films deposited by H-assisted plasma CVD method
AU - Urakawa, Tatsuya
AU - Matsuzaki, Hidehumi
AU - Yamashita, Daisuke
AU - Uchida, Giichiro
AU - Koga, Kazunori
AU - Shiratani, Masaharu
AU - Setsuhara, Yuichi
AU - Sekine, Makoto
AU - Hori, Masaru
PY - 2013/8/15
Y1 - 2013/8/15
N2 - In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.
AB - In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.
UR - http://www.scopus.com/inward/record.url?scp=84879796855&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84879796855&partnerID=8YFLogxK
U2 - 10.1016/j.surfcoat.2012.10.002
DO - 10.1016/j.surfcoat.2012.10.002
M3 - Article
AN - SCOPUS:84879796855
VL - 228
JO - Surface and Coatings Technology
JF - Surface and Coatings Technology
SN - 0257-8972
IS - SUPPL.1
ER -