Mass density control of carbon films deposited by H-assisted plasma CVD method

Tatsuya Urakawa; Hidehumi Matsuzaki; Daisuke Yamashita; Giichiro Uchida; Kazunori Koga; Masaharu Shiratani; Yuichi Setsuhara; Makoto Sekine; Masaru Hori

doi:10.1016/j.surfcoat.2012.10.002

Mass density control of carbon films deposited by H-assisted plasma CVD method

Tatsuya Urakawa, Hidehumi Matsuzaki, Daisuke Yamashita, Giichiro Uchida, Kazunori Koga, Masaharu Shiratani, Yuichi Setsuhara, Makoto Sekine, Masaru Hori

Electronic Devices

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm³ is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H₂+N₂ discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.

Original language	English
Pages (from-to)	S15-S18
Journal	Surface and Coatings Technology
Volume	228
Issue number	SUPPL.1
DOIs	https://doi.org/10.1016/j.surfcoat.2012.10.002
Publication status	Published - Aug 15 2013

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/j.surfcoat.2012.10.002

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Mass density control of carbon films deposited by H-assisted plasma CVD method. / Urakawa, Tatsuya; Matsuzaki, Hidehumi; Yamashita, Daisuke; Uchida, Giichiro; Koga, Kazunori ; Shiratani, Masaharu; Setsuhara, Yuichi; Sekine, Makoto; Hori, Masaru.

In: Surface and Coatings Technology, Vol. 228, No. SUPPL.1, 15.08.2013, p. S15-S18.

Research output: Contribution to journal › Article › peer-review

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abstract = "In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.",

author = "Tatsuya Urakawa and Hidehumi Matsuzaki and Daisuke Yamashita and Giichiro Uchida and Kazunori Koga and Masaharu Shiratani and Yuichi Setsuhara and Makoto Sekine and Masaru Hori",

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AU - Urakawa, Tatsuya

AU - Matsuzaki, Hidehumi

AU - Yamashita, Daisuke

AU - Uchida, Giichiro

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Setsuhara, Yuichi

AU - Sekine, Makoto

AU - Hori, Masaru

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AB - In order to obtain high density carbon films with keeping anisotropic deposition profile on trench substrates, we control mass density of carbon films deposited by a H-assisted plasma chemical vapor deposition (CVD) method by ion kinetic energy of ions irradiating on film surface during deposition. The highest mass density of 2.14g/cm3 is obtained for deposition under the ion energy of 75eV and it is 1.4 times as high as that for the ion energy of 32eV. We also have studied etching rate of these films using H2+N2 discharge plasmas. The lowest etch rate of 1.8nm/min is obtained for the ion energy of 75eV and it is 2.8 times as low as that for the ion energy of 32eV. Etching rate of carbon films decreases exponentially with increasing the mass density of carbon films. Control of ion energy is the key to obtain high mass density carbon films with keeping anisotropic deposition profile on trench substrates.

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