Material design of hole transport materials capable of thick-film formation in organic light emitting diodes

Masaki Aonuma, Takahito Oyamada, Hiroyuki Sasabe, Tetsuzou Miki, Chihaya Adachi

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Abstract

In this study, the authors show an empirical guideline for designing hole transport materials (HTMs) that suppress rises in driving voltage even with a few hundred nanometer thick film in the organic light emitting diodes (OLEDs). In a device structure of indium tin oxide (110 nm) /hole transport layer (HTL) (X nm) 4, 4′ -N, N′ -bis [N -(1-naphthyl)- N -phenyl-amino]biphenyl (10 nm) /tris-(8-hydroxyquinoline)aluminum (Al q3) (50 nm) MgAg (100 nm) Ag (10 nm), the authors compared electroluminescence characteristics of the OLEDs having a thin-film HTL (X=50 nm) and a thick-film HTL (X=300 nm) using 13 kinds of HTMs. They observed a closed correlation between suppression of the driving voltage and the HTMs' thermal characteristics. Highly thermally stable HTMs resulted in a small increase in the driving voltage.

Original languageEnglish
Article number183503
JournalApplied Physics Letters
Volume90
Issue number18
DOIs
Publication statusPublished - May 10 2007

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

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