Material design of organic semiconductors for light emitting organic field-effect transistors and their device characteristics

Masayuki Yahiro, Tomo Sakanoue, Hiroyuki Uchiuzou, Takahito Oyamada, Akio Toshimitsu, Chihaya Adachi

Research output: Contribution to journalArticle

Abstract

In this study, we report on material design of light-emitting organic field effect transistors (LE-OFETs). Some of newly synthesized pyrene and bis-styryl derivatives as an active layer demonstrated high field effect mobility (μh == 0.11 cm2/Vs, C 6-BSBP) and high photoluminescence efficiency (φPL-80%, symmetrical di-substituted pyrene derivatives). Further, external electroluminescence quantum efficiency was improved from 0.01% in TPPy to 0.15-0.54% in pyrene dimmers. In addition, we demonstrate an increase of EL efficiency by introducing guest-host system and ambipolar operation mechanism.

Original languageEnglish
Pages (from-to)493-503
Number of pages11
JournalYuki Gosei Kagaku Kyokaishi/Journal of Synthetic Organic Chemistry
Volume66
Issue number5
DOIs
Publication statusPublished - Jan 1 2008

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Organic field effect transistors
Semiconducting organic compounds
Derivatives
Electroluminescence
Quantum efficiency
Photoluminescence
pyrene

All Science Journal Classification (ASJC) codes

  • Organic Chemistry

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Material design of organic semiconductors for light emitting organic field-effect transistors and their device characteristics. / Yahiro, Masayuki; Sakanoue, Tomo; Uchiuzou, Hiroyuki; Oyamada, Takahito; Toshimitsu, Akio; Adachi, Chihaya.

In: Yuki Gosei Kagaku Kyokaishi/Journal of Synthetic Organic Chemistry, Vol. 66, No. 5, 01.01.2008, p. 493-503.

Research output: Contribution to journalArticle

Yahiro, Masayuki ; Sakanoue, Tomo ; Uchiuzou, Hiroyuki ; Oyamada, Takahito ; Toshimitsu, Akio ; Adachi, Chihaya. / Material design of organic semiconductors for light emitting organic field-effect transistors and their device characteristics. In: Yuki Gosei Kagaku Kyokaishi/Journal of Synthetic Organic Chemistry. 2008 ; Vol. 66, No. 5. pp. 493-503.
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