TY - JOUR
T1 - MBE growth of a novel chalcopyrite-type ternary compound MnGeP2
AU - Sato, K.
AU - Ishibashi, T.
AU - Minami, K.
AU - Yuasa, H.
AU - Jogo, J.
AU - Nagatsuka, T.
AU - Mizusawa, A.
AU - Kangawa, Y.
AU - Koukitu, A.
N1 - Funding Information:
This work has been carried out under the 21st COE Project "Future Nano Materials" of TUAT and supported in part by the Grant-in-Aid for Scientific Research (A) (1) (Category Number:13305003) from Japan Society for the Promotion of Science. We sincerely thank Prof. K. Takanashi of Tohoku University and Prof. A. Fujimori of University of Tokyo for their help in magnetic measurements.
PY - 2005/11
Y1 - 2005/11
N2 - Novel ternary Mn-containing compound MnGeP2 has been grown on GaAs and InP substrates using molecular beam epitaxy, in which Mn and Ge were supplied from solid sources and P from a gas source. The films obtained showed XRD pattern characteristic of MnGeP2. Lattice constants were determined using reciprocal lattice mapping analysis. Films directly grown on GaAs substrate showed three-dimensional grain-growth. By introduction of a Ge buffer layer growth mode became two-dimensional. The magnetization vs. temperature curve showed ferromagnetic properties at room temperature, in conflict with theory which predicts its antiferromagnetism. Presence of secondary phase is discussed.
AB - Novel ternary Mn-containing compound MnGeP2 has been grown on GaAs and InP substrates using molecular beam epitaxy, in which Mn and Ge were supplied from solid sources and P from a gas source. The films obtained showed XRD pattern characteristic of MnGeP2. Lattice constants were determined using reciprocal lattice mapping analysis. Films directly grown on GaAs substrate showed three-dimensional grain-growth. By introduction of a Ge buffer layer growth mode became two-dimensional. The magnetization vs. temperature curve showed ferromagnetic properties at room temperature, in conflict with theory which predicts its antiferromagnetism. Presence of secondary phase is discussed.
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U2 - 10.1016/j.jpcs.2005.09.098
DO - 10.1016/j.jpcs.2005.09.098
M3 - Article
AN - SCOPUS:29144444551
VL - 66
SP - 2030
EP - 2035
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
SN - 0022-3697
IS - 11
ER -