Abstract
Novel ternary Mn-containing compound MnGeP2 has been grown on GaAs and InP substrates using molecular beam epitaxy, in which Mn and Ge were supplied from solid sources and P from a gas source. The films obtained showed XRD pattern characteristic of MnGeP2. Lattice constants were determined using reciprocal lattice mapping analysis. Films directly grown on GaAs substrate showed three-dimensional grain-growth. By introduction of a Ge buffer layer growth mode became two-dimensional. The magnetization vs. temperature curve showed ferromagnetic properties at room temperature, in conflict with theory which predicts its antiferromagnetism. Presence of secondary phase is discussed.
Original language | English |
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Pages (from-to) | 2030-2035 |
Number of pages | 6 |
Journal | Journal of Physics and Chemistry of Solids |
Volume | 66 |
Issue number | 11 |
DOIs | |
Publication status | Published - Nov 1 2005 |
Externally published | Yes |
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
- Condensed Matter Physics