Measurement and empirical equation of critical stresses for slip generation from oxide precipitates in silicon wafers

Jun Fujise, Bonggyun Ko, Toshiaki Ono, Masaki Tanaka

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The behavior of slip dislocations generated from oxide precipitates or bulk microdefects (BMDs) in Czochralski silicon wafers with different BMD sizes and oxygen concentrations has been studied using three-point bending tests at high temperatures (700-850 °C). We have developed a method of measuring critical stresses for slip generation caused by BMD growth. It has been found that not only the locking effect of residual oxygen on dislocations but also other factors such as BMD size are important for critical stress to generate and mobilize slip dislocations on {111} crystallographic planes, especially in high temperature ranges. An empirical equation for the estimation of the critical stress has also been produced using a simple model and the experimental results obtained in this study. The formulation enables us to accurately estimate the behavior of slip deformation under various thermal stress conditions.

Original languageEnglish
Article number035501
JournalJapanese Journal of Applied Physics
Volume57
Issue number3
DOIs
Publication statusPublished - Mar 2018

Fingerprint

critical loading
Silicon wafers
Precipitates
precipitates
slip
wafers
Oxides
oxides
silicon
Oxygen
Bending tests
Thermal stress
oxygen
thermal stresses
locking
Temperature
formulations
estimates

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Measurement and empirical equation of critical stresses for slip generation from oxide precipitates in silicon wafers. / Fujise, Jun; Ko, Bonggyun; Ono, Toshiaki; Tanaka, Masaki.

In: Japanese Journal of Applied Physics, Vol. 57, No. 3, 035501, 03.2018.

Research output: Contribution to journalArticle

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