TY - JOUR
T1 - Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs
AU - Liao, Wang
AU - Hashimoto, Masanori
AU - Manabe, Seiya
AU - Watanabe, Yukinobu
AU - Abe, Shin Ichiro
AU - Nakano, Keita
AU - Sato, Hikaru
AU - Kin, Tadahiro
AU - Hamada, Koji
AU - Tampo, Motonobu
AU - Miyake, Yasuhiro
N1 - Funding Information:
Manuscript received March 2, 2018; revised April 4, 2018; accepted April 8, 2018. Date of publication April 11, 2018; date of current version August 15, 2018. This work was supported by Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science under Grant 16H03906. (Corresponding author: Wang Liao.) W. Liao and M. Hashimoto are with the Department of Information System Engineering, Osaka University, Suita 565-0871, Japan (e-mail: wang.liao@ist.osaka-u.ac.jp; hasimoto@ist.osaka-u.ac.jp).
PY - 2018/8
Y1 - 2018/8
N2 - Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.
AB - Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.
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U2 - 10.1109/TNS.2018.2825469
DO - 10.1109/TNS.2018.2825469
M3 - Article
AN - SCOPUS:85045299565
VL - 65
SP - 1734
EP - 1741
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
SN - 0018-9499
IS - 8
M1 - 8335761
ER -