Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs

Wang Liao, Masanori Hashimoto, Seiya Manabe, Yukinobu Watanabe, Shin Ichiro Abe, Keita Nakano, Hikaru Sato, Tadahiro Kin, Koji Hamada, Motonobu Tampo, Yasuhiro Miyake

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.

Original languageEnglish
Article number8335761
Pages (from-to)1734-1741
Number of pages8
JournalIEEE Transactions on Nuclear Science
Volume65
Issue number8
DOIs
Publication statusPublished - Aug 1 2018

Fingerprint

Static random access storage
muons
Irradiation
Heavy ions
single event upsets
Momentum
Deposits
Data storage equipment
irradiation
Electric potential
cells
thresholds
Experiments
random access memory
CMOS
proportion
heavy ions
tendencies
simulation
actuators

All Science Journal Classification (ASJC) codes

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

Cite this

Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs. / Liao, Wang; Hashimoto, Masanori; Manabe, Seiya; Watanabe, Yukinobu; Abe, Shin Ichiro; Nakano, Keita; Sato, Hikaru; Kin, Tadahiro; Hamada, Koji; Tampo, Motonobu; Miyake, Yasuhiro.

In: IEEE Transactions on Nuclear Science, Vol. 65, No. 8, 8335761, 01.08.2018, p. 1734-1741.

Research output: Contribution to journalArticle

Liao, W, Hashimoto, M, Manabe, S, Watanabe, Y, Abe, SI, Nakano, K, Sato, H, Kin, T, Hamada, K, Tampo, M & Miyake, Y 2018, 'Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs', IEEE Transactions on Nuclear Science, vol. 65, no. 8, 8335761, pp. 1734-1741. https://doi.org/10.1109/TNS.2018.2825469
Liao, Wang ; Hashimoto, Masanori ; Manabe, Seiya ; Watanabe, Yukinobu ; Abe, Shin Ichiro ; Nakano, Keita ; Sato, Hikaru ; Kin, Tadahiro ; Hamada, Koji ; Tampo, Motonobu ; Miyake, Yasuhiro. / Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs. In: IEEE Transactions on Nuclear Science. 2018 ; Vol. 65, No. 8. pp. 1734-1741.
@article{23226a06e7cb4984b4194f4e6a7e567b,
title = "Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs",
abstract = "Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.",
author = "Wang Liao and Masanori Hashimoto and Seiya Manabe and Yukinobu Watanabe and Abe, {Shin Ichiro} and Keita Nakano and Hikaru Sato and Tadahiro Kin and Koji Hamada and Motonobu Tampo and Yasuhiro Miyake",
year = "2018",
month = "8",
day = "1",
doi = "10.1109/TNS.2018.2825469",
language = "English",
volume = "65",
pages = "1734--1741",
journal = "IEEE Transactions on Nuclear Science",
issn = "0018-9499",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "8",

}

TY - JOUR

T1 - Measurement and mechanism investigation of negative and positive muon-induced upsets in 65-nm Bulk SRAMs

AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Abe, Shin Ichiro

AU - Nakano, Keita

AU - Sato, Hikaru

AU - Kin, Tadahiro

AU - Hamada, Koji

AU - Tampo, Motonobu

AU - Miyake, Yasuhiro

PY - 2018/8/1

Y1 - 2018/8/1

N2 - Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.

AB - Irradiation experiments of positive and negative muon were conducted for 65-nm bulk CMOS static random-access memory. The experimental results reveal that parasitic bipolar action (PBA) contributes to negative muon-induced upsets. We observe an increase in single event upset (SEU) cross section at higher operation voltage under negative muon irradiation while positive muon shows an opposite decreasing tendency. Also, the proportion of multiple-cell upset (MCU) events to all the negative muon-induced upset events is up to 66, and more than a 20-bit MCU is observed. Furthermore, Monte Carlo simulation of particle and heavy ion transport code system (PHITS) is performed for explaining the difference in SEU between positive and negative muons. We also discuss the charge threshold that triggers PBA-induced MCU using measurement and simulation results with different momentum muons. The estimated threshold is much larger than the charge that the positive muons can deposit, which well explains that no PBA-induced MCUs are observed under positive muon irradiation.

UR - http://www.scopus.com/inward/record.url?scp=85045299565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85045299565&partnerID=8YFLogxK

U2 - 10.1109/TNS.2018.2825469

DO - 10.1109/TNS.2018.2825469

M3 - Article

AN - SCOPUS:85045299565

VL - 65

SP - 1734

EP - 1741

JO - IEEE Transactions on Nuclear Science

JF - IEEE Transactions on Nuclear Science

SN - 0018-9499

IS - 8

M1 - 8335761

ER -