Measurement of electron energy distribution obtained from wedge type silicon emitter array

Katsuya Higa, Akiyoshi Baba, Tanemasa Asano

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Electron energy distribution obtained from wedge type silicon emitter array was measured during high and low emission current operation. The dimensions of the basement of each wedge-shaped emitter tip were 30 μm (width) × 1000 μm (length). The energy distribution of field emission electron when the first gate applied for 990 V was shown. The results show that the energy distribution is changed during high emission current operation.

Original languageEnglish
Title of host publicationDigest of Papers - Microprocesses and Nanotechnology 2004
Pages258-259
Number of pages2
Publication statusPublished - Dec 1 2004
Event2004 International Microprocesses and Nanotechnology Conference - Osaka, Japan
Duration: Oct 26 2004Oct 29 2004

Publication series

NameDigest of Papers - Microprocesses and Nanotechnology 2004

Other

Other2004 International Microprocesses and Nanotechnology Conference
CountryJapan
CityOsaka
Period10/26/0410/29/04

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Higa, K., Baba, A., & Asano, T. (2004). Measurement of electron energy distribution obtained from wedge type silicon emitter array. In Digest of Papers - Microprocesses and Nanotechnology 2004 (pp. 258-259). (Digest of Papers - Microprocesses and Nanotechnology 2004).