TY - JOUR
T1 - Measurement of strain and strain relaxation in free-standing Si membranes by convergent beam electron diffraction and finite element method
AU - Gao, H.
AU - Ikeda, K.
AU - Hata, S.
AU - Nakashima, H.
AU - Wang, D.
AU - Nakashima, H.
N1 - Funding Information:
The authors thank Toshiba Corporation Semiconductor Company for providing the FSSM samples. This research was supported by a grant for the Knowledge Cluster Initiative implemented by the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2011/4
Y1 - 2011/4
N2 - Bridge-shaped free-standing Si membranes (FSSM), strained by low-pressure (LP) SixNy, plasma-enhanced (PE) SixN y and SixGe1-x stressors, were measured by convergent beam electron diffraction (CBED) and the finite element method (FEM). The results of CBED show that, while the strain along the length of the FSSM is compressive in an LPSixNy/Si sample, those along the length of the FSSM are tensile in PESixNy/Si and SixGe1-x/Si samples. The average absolute values of strains are different in FSSM with LPSixNy, PESixNy and SixGe1-x as stressors. The FEM was used to compensate the results of CBED taking into account the strain relaxation in transmission electron microscopy (TEM) sample preparation. The FEM results give the strain properties in three dimensions, and are in good agreement with the results of CBED. There is approximately no strain relaxation along the length of FSSM, and the elastic strains along the other two axes in FSSM are partially relaxed by thinning down for the preparation of TEM samples.
AB - Bridge-shaped free-standing Si membranes (FSSM), strained by low-pressure (LP) SixNy, plasma-enhanced (PE) SixN y and SixGe1-x stressors, were measured by convergent beam electron diffraction (CBED) and the finite element method (FEM). The results of CBED show that, while the strain along the length of the FSSM is compressive in an LPSixNy/Si sample, those along the length of the FSSM are tensile in PESixNy/Si and SixGe1-x/Si samples. The average absolute values of strains are different in FSSM with LPSixNy, PESixNy and SixGe1-x as stressors. The FEM was used to compensate the results of CBED taking into account the strain relaxation in transmission electron microscopy (TEM) sample preparation. The FEM results give the strain properties in three dimensions, and are in good agreement with the results of CBED. There is approximately no strain relaxation along the length of FSSM, and the elastic strains along the other two axes in FSSM are partially relaxed by thinning down for the preparation of TEM samples.
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U2 - 10.1016/j.actamat.2011.01.031
DO - 10.1016/j.actamat.2011.01.031
M3 - Article
AN - SCOPUS:79952359270
SN - 1359-6454
VL - 59
SP - 2882
EP - 2890
JO - Acta Materialia
JF - Acta Materialia
IS - 7
ER -