Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

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Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

Original languageEnglish
Article number090208
JournalJapanese journal of applied physics
Issue number9 PART 1
Publication statusPublished - Sep 2010

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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