Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

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Abstract

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

Original languageEnglish
Article number090208
JournalJapanese Journal of Applied Physics
Volume49
Issue number9 PART 1
DOIs
Publication statusPublished - Sep 2010

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Electron diffraction
finite element method
electron diffraction
membranes
Membranes
Finite element method
Strain relaxation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{e4e9d878d97d482badf5ce49840d5bc1,
title = "Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method",
abstract = "Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1{\%} at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.",
author = "Hongye Gao and Ikeda, {Ken Ichi} and Satoshi Hata and Hideharu Nakashima and Dong Wang and Hiroshi Nakashima",
year = "2010",
month = "9",
doi = "10.1143/JJAP.49.090208",
language = "English",
volume = "49",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Institute of Physics",
number = "9 PART 1",

}

TY - JOUR

T1 - Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

AU - Gao, Hongye

AU - Ikeda, Ken Ichi

AU - Hata, Satoshi

AU - Nakashima, Hideharu

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2010/9

Y1 - 2010/9

N2 - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

AB - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

UR - http://www.scopus.com/inward/record.url?scp=78049353921&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78049353921&partnerID=8YFLogxK

U2 - 10.1143/JJAP.49.090208

DO - 10.1143/JJAP.49.090208

M3 - Article

AN - SCOPUS:78049353921

VL - 49

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 9 PART 1

M1 - 090208

ER -