Measurements of the cathode sheath in a magnetron sputtering discharge using laser induced fluorescence

M. D. Bowden, T. Nakamura, K. Muraoka, Yukihiko Yamagata, B. W. James, M. Maeda

Research output: Contribution to journalArticle

19 Citations (Scopus)

Abstract

Magnetron discharges are widely used as sputtering sources for thin film deposition. Despite the importance of the sheath region where the electric field can be very high, there have been few experimental investigations of this region in magnetron plasmas. We report values of the sheath thickness deduced from measurements of the electric field distribution using laser spectroscopy. With this technique, a transition which is normally forbidden becomes in the presence of an electric field partially allowed so that laser induced fluorescence on this transition can be used as a measure of the electric field. It was found that the sheath thickness was approximately equal to the maximum displacement, in the absence of collisions, of a secondary electron from the cathode surface.

Original languageEnglish
Pages (from-to)3664-3667
Number of pages4
JournalJournal of Applied Physics
Volume73
Issue number8
DOIs
Publication statusPublished - Dec 1 1993
Externally publishedYes

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sheaths
laser induced fluorescence
magnetron sputtering
cathodes
electric fields
laser spectroscopy
sputtering
collisions
thin films
electrons

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Measurements of the cathode sheath in a magnetron sputtering discharge using laser induced fluorescence. / Bowden, M. D.; Nakamura, T.; Muraoka, K.; Yamagata, Yukihiko; James, B. W.; Maeda, M.

In: Journal of Applied Physics, Vol. 73, No. 8, 01.12.1993, p. 3664-3667.

Research output: Contribution to journalArticle

Bowden, M. D. ; Nakamura, T. ; Muraoka, K. ; Yamagata, Yukihiko ; James, B. W. ; Maeda, M. / Measurements of the cathode sheath in a magnetron sputtering discharge using laser induced fluorescence. In: Journal of Applied Physics. 1993 ; Vol. 73, No. 8. pp. 3664-3667.
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