Mechanical damage gettering effect in Si

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.

Original languageEnglish
Pages (from-to)2097-2104
Number of pages8
JournalJapanese Journal of Applied Physics
Volume20
Issue number11
DOIs
Publication statusPublished - Jan 1 1981
Externally publishedYes

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wafers
damage
sinks
stress distribution
nuclei

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Mechanical damage gettering effect in Si. / Sawada, Renshi; Karaki, Toshiroh; Watanabe, Junji.

In: Japanese Journal of Applied Physics, Vol. 20, No. 11, 01.01.1981, p. 2097-2104.

Research output: Contribution to journalArticle

Sawada, R, Karaki, T & Watanabe, J 1981, 'Mechanical damage gettering effect in Si', Japanese Journal of Applied Physics, vol. 20, no. 11, pp. 2097-2104. https://doi.org/10.1143/JJAP.20.2097
Sawada, Renshi ; Karaki, Toshiroh ; Watanabe, Junji. / Mechanical damage gettering effect in Si. In: Japanese Journal of Applied Physics. 1981 ; Vol. 20, No. 11. pp. 2097-2104.
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