Mechanical damage gettering effect in Si

Renshi Sawada, Toshiroh Karaki, Junji Watanabe

    Research output: Contribution to journalArticlepeer-review

    10 Citations (Scopus)

    Abstract

    The gettering effectiveness of microdefects in Si wafer with mechanical damage introduced deliberately is investigated in relation to the degree of damage and the stress field around the damage. It is found that gettering action continues for 8 hours or more, although slower, when the damage is applied to a deep part of the wafer. This is due to the fact that the dislocations introduced deep in the wafer continue to serve as sinks for microdefect nuclei. The gettering effect is also greatly dependent on the microdefect density of a wafer.

    Original languageEnglish
    Pages (from-to)2097-2104
    Number of pages8
    JournalJapanese Journal of Applied Physics
    Volume20
    Issue number11
    DOIs
    Publication statusPublished - Nov 1981

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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