Mechanism behind the crack formation in hydrogen doping Cz-Si crystal growth

Wataru Sugimura, Kousuke Takata, Masaki Tanaka, Kenji Higashida

    Research output: Contribution to journalArticlepeer-review

    Abstract

    In this study, {100} cracks were found in Czochralski (Cz) silicon wafers grown in the atmosphere including hydrogen under the condition of a low Vc/Gc (Vc, growth rate; and Gc, temperature gradient) although the {100} plane is not a cleavage plane of silicon crystals. It was also found that dislocation clusters were associated with the as-grown defects. To reveal the mechanism behind the crack formation, the process of introducing interstitial and hydrogen atoms into a Cz-Si crystal upon solidification was imitated by applying ion irradiation into Cz silicon wafers under three different conditions: silicon ions and hydrogen ions, silicon ions only, and hydrogen ions only. In this case, {100} cracks were only found in the wafer irradiated with both silicon and hydrogen ions. This suggests that the existence of dislocations in silicon is necessary for crack formation. Density functional theory calculations showed that the cleavage energy was decreased by the arrangement of hydrogen atoms on a {100} plane of a silicon crystal, which can explain the formation of {100} cracks during solidification.

    Original languageEnglish
    Pages (from-to)1936-1942
    Number of pages7
    JournalMaterials Transactions
    Volume60
    Issue number9
    DOIs
    Publication statusPublished - Jan 1 2019

    All Science Journal Classification (ASJC) codes

    • Materials Science(all)
    • Condensed Matter Physics
    • Mechanics of Materials
    • Mechanical Engineering

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