Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

Kosuke Takenaka; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Toshiya Shingen

doi:10.1016/j.tsf.2005.08.028

Mechanism of Cu deposition from Cu(EDMDD)₂ using H-assisted plasma CVD

Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Toshiya Shingen

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)₂ have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)₂ by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.028
Publication status	Published - May 26 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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title = "Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD",

abstract = "Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.",

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T1 - Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

AU - Takenaka, Kosuke

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Shingen, Toshiya

PY - 2006/5/26

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AB - Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

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