Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

Kosuke Takenaka; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Toshiya Shingen

doi:10.1016/j.tsf.2005.08.028

Mechanism of Cu deposition from Cu(EDMDD)₂ using H-assisted plasma CVD

Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Toshiya Shingen

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14 Citations (Scopus)

Abstract

Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)₂ have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)₂ by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.028
Publication status	Published - May 26 2006

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

Takenaka, K., Koga, K., Shiratani, M., Watanabe, Y., & Shingen, T. (2006). Mechanism of Cu deposition from Cu(EDMDD)₂ using H-assisted plasma CVD. Thin Solid Films, 506-507, 197-201. https://doi.org/10.1016/j.tsf.2005.08.028

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AB - Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

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10.1016/j.tsf.2005.08.028