Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

Kosuke Takenaka; Kazunori Koga; Masaharu Shiratani; Yukio Watanabe; Toshiya Shingen

doi:10.1016/j.tsf.2005.08.028

Mechanism of Cu deposition from Cu(EDMDD)₂ using H-assisted plasma CVD

Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Toshiya Shingen

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)₂ have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)₂ by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

Original language	English
Pages (from-to)	197-201
Number of pages	5
Journal	Thin Solid Films
Volume	506-507
DOIs	https://doi.org/10.1016/j.tsf.2005.08.028
Publication status	Published - May 26 2006

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2005.08.028

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@article{d1f4ac90e1af48219a46f1f87f74ad65,

title = "Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD",

abstract = "Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.",

author = "Kosuke Takenaka and Kazunori Koga and Masaharu Shiratani and Yukio Watanabe and Toshiya Shingen",

note = "Funding Information: This work was supported partly by a Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science. We are indebted to Prof. S. Samukawa, Tohoku University and Dr. G. Chung, Tokyo Electron Ltd., for supplying Si substrates with trenches. We would like to acknowledge the assistance of Messrs H. Matsuzaki and T. Kinoshita who contributed greatly to the preparation of the experimental set up.",

year = "2006",

month = may,

day = "26",

doi = "10.1016/j.tsf.2005.08.028",

language = "English",

volume = "506-507",

pages = "197--201",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

AU - Takenaka, Kosuke

AU - Koga, Kazunori

AU - Shiratani, Masaharu

AU - Watanabe, Yukio

AU - Shingen, Toshiya

N1 - Funding Information: This work was supported partly by a Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science. We are indebted to Prof. S. Samukawa, Tohoku University and Dr. G. Chung, Tokyo Electron Ltd., for supplying Si substrates with trenches. We would like to acknowledge the assistance of Messrs H. Matsuzaki and T. Kinoshita who contributed greatly to the preparation of the experimental set up.

PY - 2006/5/26

Y1 - 2006/5/26

N2 - Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

AB - Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

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DO - 10.1016/j.tsf.2005.08.028

M3 - Article

AN - SCOPUS:33645231324

VL - 506-507

SP - 197

EP - 201

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -

Mechanism of Cu deposition from Cu(EDMDD)₂ using H-assisted plasma CVD

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