Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields

Koichi Kakimoto, Akimasa Tashiro, Hideo Ishii, Takashige Shinozaki

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume150
Issue number10
DOIs
Publication statusPublished - Oct 1 2003

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Crystallization
Crystal growth
Magnetic fields
Oxygen
Crucibles
Silicon
Crystal growth from melt
Hot Temperature
Liquids

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields. / Kakimoto, Koichi; Tashiro, Akimasa; Ishii, Hideo; Shinozaki, Takashige.

In: Journal of the Electrochemical Society, Vol. 150, No. 10, 01.10.2003.

Research output: Contribution to journalArticle

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