Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

Taizoh Sadoh, Fitrianto, Atsushi Kenjo, Akihiro Miyauchi, Hironori Inoue, Masanobu Miyao

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1 Citation (Scopus)

Abstract

Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.

Original languageEnglish
Pages (from-to)2468-2471
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume41
Issue number4 B
DOIs
Publication statusPublished - Apr 1 2002

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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