Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

Taizoh Sadoh; Fitrianto; Atsushi Kenjo; Akihiro Miyauchi; Hironori Inoue; Masanobu Miyao

doi:10.1143/JJAP.41.2468

Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

Taizoh Sadoh, Fitrianto, Atsushi Kenjo, Akihiro Miyauchi, Hironori Inoue, Masanobu Miyao

Electronic Devices

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Abstract

Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si_0.6Ge_0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.

Original language	English
Pages (from-to)	2468-2471
Number of pages	4
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	41
Issue number	4 B
DOIs	https://doi.org/10.1143/JJAP.41.2468
Publication status	Published - Apr 1 2002

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Mechanism of improved thermal stability of B in poly-SiGe gate on SiON",

abstract = "Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.",

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T1 - Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

AU - Sadoh, Taizoh

AU - Fitrianto,

AU - Kenjo, Atsushi

AU - Miyauchi, Akihiro

AU - Inoue, Hironori

AU - Miyao, Masanobu

PY - 2002/4/1

Y1 - 2002/4/1

N2 - Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.

AB - Post-annealing characteristics of in situ B-doped poly-SiGe films have been investigated. Thermal stability of substitutional B atoms at a supersaturated concentration was significantly improved by Ge doping, for example, the stability at 800°C for poly-Si0.6Ge0.4 films was nine times as high as that for poly-Si films. Both fast and slow processes exist for the deactivation of B. The fast process was due to movement of B atoms from substitutional to interstitial sites, enhanced by a local strain induced by the difference in atomic radii between Si and B atoms, and the slow process was due to trapping of B at grain boundaries during grain growth. The mechanism of the improved thermal stability of B atoms is discussed on the basis of local strain compensation by Ge atoms.

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Mechanism of improved thermal stability of B in poly-SiGe gate on SiON

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