Mechanism of mobility enhancement in Ge p-channel metal-oxide-semiconductor field-effect transistor due to introduction of Al atoms into SiO2/GeO2 gate stack

Yuta Nagatomi, Tomoki Tateyama, Shintaro Tanaka, Wei Chen Wen, Taisei Sakaguchi, Keisuke Yamamoto, Liwei Zhao, Dong Wang, Hiroshi Nakashima

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