Mechanism of self-epitaxy in buffer layer for coated conductors

Takahiro Taneda, Masateru Yoshizumi, Takahiko Takahashi, Reiji Kuriki, Takaomi Shinozaki, Teruo Izumi, Yuh Shiohara, Yasuhiro Iijima, Takashi Saitoh, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama, Takanobu Kiss

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Abstract

To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO 2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.

Original languageEnglish
Article number6601005
JournalIEEE Transactions on Applied Superconductivity
Volume23
Issue number3
DOIs
Publication statusPublished - Feb 8 2013

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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