Mechanism of self-epitaxy in buffer layer for coated conductors

Takahiro Taneda; Masateru Yoshizumi; Takahiko Takahashi; Reiji Kuriki; Takaomi Shinozaki; Teruo Izumi; Yuh Shiohara; Yasuhiro Iijima; Takashi Saitoh; Ryuji Yoshida; Takeharu Kato; Tsukasa Hirayama; Takanobu Kiss

doi:10.1109/TASC.2012.2235113

Mechanism of self-epitaxy in buffer layer for coated conductors

Takahiro Taneda, Masateru Yoshizumi, Takahiko Takahashi, Reiji Kuriki, Takaomi Shinozaki, Teruo Izumi, Yuh Shiohara, Yasuhiro Iijima, Takashi Saitoh, Ryuji Yoshida, Takeharu Kato, Tsukasa Hirayama, Takanobu Kiss

Section of Measurement and Control Engineering

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO ₂, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO₃ as substrates for CeO₂ deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO₂ particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.

Original language	English
Article number	6601005
Journal	IEEE Transactions on Applied Superconductivity
Volume	23
Issue number	3
DOIs	https://doi.org/10.1109/TASC.2012.2235113
Publication status	Published - 2013

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering

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10.1109/TASC.2012.2235113

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Mechanism of self-epitaxy in buffer layer for coated conductors. / Taneda, Takahiro; Yoshizumi, Masateru; Takahashi, Takahiko; Kuriki, Reiji; Shinozaki, Takaomi; Izumi, Teruo; Shiohara, Yuh; Iijima, Yasuhiro; Saitoh, Takashi; Yoshida, Ryuji; Kato, Takeharu; Hirayama, Tsukasa; Kiss, Takanobu.

In: IEEE Transactions on Applied Superconductivity, Vol. 23, No. 3, 6601005, 2013.

Research output: Contribution to journal › Article › peer-review

Taneda, Takahiro ; Yoshizumi, Masateru ; Takahashi, Takahiko ; Kuriki, Reiji ; Shinozaki, Takaomi ; Izumi, Teruo ; Shiohara, Yuh ; Iijima, Yasuhiro ; Saitoh, Takashi ; Yoshida, Ryuji ; Kato, Takeharu ; Hirayama, Tsukasa ; Kiss, Takanobu. / Mechanism of self-epitaxy in buffer layer for coated conductors. In: IEEE Transactions on Applied Superconductivity. 2013 ; Vol. 23, No. 3.

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abstract = "To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO 2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.",

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AU - Shinozaki, Takaomi

AU - Izumi, Teruo

AU - Shiohara, Yuh

AU - Iijima, Yasuhiro

AU - Saitoh, Takashi

AU - Yoshida, Ryuji

AU - Kato, Takeharu

AU - Hirayama, Tsukasa

AU - Kiss, Takanobu

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AB - To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO 2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.

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Mechanism of self-epitaxy in buffer layer for coated conductors

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