TY - JOUR
T1 - Mechanism of self-epitaxy in buffer layer for coated conductors
AU - Taneda, Takahiro
AU - Yoshizumi, Masateru
AU - Takahashi, Takahiko
AU - Kuriki, Reiji
AU - Shinozaki, Takaomi
AU - Izumi, Teruo
AU - Shiohara, Yuh
AU - Iijima, Yasuhiro
AU - Saitoh, Takashi
AU - Yoshida, Ryuji
AU - Kato, Takeharu
AU - Hirayama, Tsukasa
AU - Kiss, Takanobu
PY - 2013/2/8
Y1 - 2013/2/8
N2 - To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO 2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.
AB - To elucidate the self-epitaxy mechanism of pulsed-laser deposition-CeO 2, a hypothetical relationship with the substrate was derived based on the ion-beam-assisted deposition layer-processing method: the smaller the misorientation angle, the larger the crystallite size. In-plane misorientation angle dependences of crystallite sizes of ion-beam-assisted deposition-MgO and LaMnO3 as substrates for CeO2 deposition, obtained using X-ray diffraction and transmission electron microscopy, indicated that the hypothesis is plausible. This relationship is regarded as a prerequisite for self-epitaxy because large crystallites with small strains would be energetically favorable when CeO2 particles crystallize on them. Eventually, they will grow to dominant grains, which is a possible self-epitaxy mechanism.
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U2 - 10.1109/TASC.2012.2235113
DO - 10.1109/TASC.2012.2235113
M3 - Article
AN - SCOPUS:84873320400
VL - 23
JO - IEEE Transactions on Applied Superconductivity
JF - IEEE Transactions on Applied Superconductivity
SN - 1051-8223
IS - 3
M1 - 6601005
ER -