TY - JOUR
T1 - Memory device using a conducting polymer and solid polymer electrolyte
AU - Kaneto, Keiichi
AU - Asano, Tanemasa
AU - Takashima, Wataru
PY - 1991/2
Y1 - 1991/2
N2 - An electrically erasable memory device is fabricated using a conducting polymer and solid polymer electrolyte. The conductivity of the memory channel consisting of the conducting polymer is controlled by electrochemical doping through the counter (writing) electrode. The channel conductivity was varied by the number of writing or erasing pulses by 3-4 orders of magnitude.
AB - An electrically erasable memory device is fabricated using a conducting polymer and solid polymer electrolyte. The conductivity of the memory channel consisting of the conducting polymer is controlled by electrochemical doping through the counter (writing) electrode. The channel conductivity was varied by the number of writing or erasing pulses by 3-4 orders of magnitude.
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U2 - 10.1143/JJAP.30.L215
DO - 10.1143/JJAP.30.L215
M3 - Article
AN - SCOPUS:0026103576
SN - 0021-4922
VL - 30
SP - L215-L217
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 2
ER -