Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

Yukio Watanabe, M. Tanamura, Y. Matsumoto

Research output: Contribution to journalArticlepeer-review

Abstract

Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-Tc superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.

Original languageEnglish
Pages (from-to)141-148
Number of pages8
JournalIntegrated Ferroelectrics
Volume13
Issue number1-3
DOIs
Publication statusPublished - Jan 1 1996
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Control and Systems Engineering
  • Ceramics and Composites
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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