Memristive switching phenomena in a single oxide nanowire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

Original languageEnglish
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages28-31
Number of pages4
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes
Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
Duration: Oct 18 2011Oct 21 2011

Publication series

Name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Other

Other2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
CountryKorea, Republic of
CityJeju
Period10/18/1110/21/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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