Memristive switching phenomena in a single oxide nanowire

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Electrically driven resistive switching (RS) in metal/oxide/metal junctions, so-called ReRAM and/or Memristor, has attracted much attention due to the potential applications toward next-generation nonvolatile memory devices. However the lack of nanoscale RS mechanism has been held back the range of practical applications. Here we demonstrate the nonvolatile RS in a single oxide nanowire (CoO x, NiO x, TiO 2) with 10 nm scale and the experimentally revealed nanoscale RS mechanism. The approach using oxide nanowire offers a platform not only to investigate the intrinsic characteristics of RS but also to tailor the RS properties for next-generation memory devices.

Original languageEnglish
Title of host publication2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Pages28-31
Number of pages4
DOIs
Publication statusPublished - Dec 1 2011
Externally publishedYes
Event2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011 - Jeju, Korea, Republic of
Duration: Oct 18 2011Oct 21 2011

Publication series

Name2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011

Other

Other2011 IEEE Nanotechnology Materials and Devices Conference, NMDC 2011
Country/TerritoryKorea, Republic of
CityJeju
Period10/18/1110/21/11

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

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