MESFET’s on a GaAs-on-Insulator Structure

Kazuo Tsutsui, Tadao Nakazawa, Tanemasa Asano, Hiroshi Ishiwara, Seijiro Furukawa

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Abstract

MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.

Original languageEnglish
Pages (from-to)277-279
Number of pages3
JournalIEEE Electron Device Letters
VolumeEDL-8
Issue number6
DOIs
Publication statusPublished - Jun 1987

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Tsutsui, K., Nakazawa, T., Asano, T., Ishiwara, H., & Furukawa, S. (1987). MESFET’s on a GaAs-on-Insulator Structure. IEEE Electron Device Letters, EDL-8(6), 277-279. https://doi.org/10.1109/EDL.1987.26629