MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering