Single-crystalline-Ge (c-Ge) networks with various crystal orientations on insulators formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si platform. c-Ge networks are realized by rapid-melting growth of mesh-patterned amorphous-Ge over large areas (500×250 μm m2) on (110) and (111) as well as (100) Si substrates by optimizing the shape and the size of the mesh. It is revealed that latent-heat generated at the growth front can be controlled by selecting mesh-shape-and-size, which suppresses the spontaneous nucleation. In addition, essential role of the growth-direction on preventing the rotational growth is clarified.
|Journal||Applied Physics Letters|
|Publication status||Published - May 2 2011|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)