Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators

Ichiro Mizushima, Kaoru Toko, Yasuharu Ohta, Takashi Sakane, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Single-crystalline-Ge (c-Ge) networks with various crystal orientations on insulators formed on Si substrates are essential for integrating high-speed and multifunctional devices onto the Si platform. c-Ge networks are realized by rapid-melting growth of mesh-patterned amorphous-Ge over large areas (500×250 μm m2) on (110) and (111) as well as (100) Si substrates by optimizing the shape and the size of the mesh. It is revealed that latent-heat generated at the growth front can be controlled by selecting mesh-shape-and-size, which suppresses the spontaneous nucleation. In addition, essential role of the growth-direction on preventing the rotational growth is clarified.

Original languageEnglish
Article number182107
JournalApplied Physics Letters
Volume98
Issue number18
DOIs
Publication statusPublished - May 2 2011

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mesh
melting
insulators
latent heat
platforms
high speed
nucleation
crystals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Mesh-shape-and-size controlled rapid-melting growth for the formation of single-crystalline (100), (110), and (111) Ge networks on insulators. / Mizushima, Ichiro; Toko, Kaoru; Ohta, Yasuharu; Sakane, Takashi; Sadoh, Taizoh; Miyao, Masanobu.

In: Applied Physics Letters, Vol. 98, No. 18, 182107, 02.05.2011.

Research output: Contribution to journalArticle

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