Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array

Shinya Kato, Yuya Watanabe, Yasuyoshi Kurokawa, Akira Yamada, Yoshimi Ohta, Yusuke Niwa, masaki Hirota

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

30-nm-diameter silica nanoparticles with a carboxyl radical (COO -) were successfully dispersed on an amino-treated silicon wafer at about 20 nm intervals owing to the repulsion among nanoparticles with negative charges. The dispersed silica nanoparticles were used as the mask for the preparation of silicon nanowire (SiNW) arrays by metal-assisted chemical etching (MAE). The diameter of the prepared SiNWs was approximately 30nm from their transmission electron microscope image.

Original languageEnglish
Article number02BP09
JournalJapanese Journal of Applied Physics
Volume51
Issue number2 PART 2
DOIs
Publication statusPublished - Feb 1 2012
Externally publishedYes

Fingerprint

Nanowires
Etching
nanowires
Silica
etching
Nanoparticles
silicon dioxide
Fabrication
Silicon
nanoparticles
fabrication
silicon
Metals
metals
Silicon wafers
Masks
Electron microscopes
masks
electron microscopes
wafers

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array. / Kato, Shinya; Watanabe, Yuya; Kurokawa, Yasuyoshi; Yamada, Akira; Ohta, Yoshimi; Niwa, Yusuke; Hirota, masaki.

In: Japanese Journal of Applied Physics, Vol. 51, No. 2 PART 2, 02BP09, 01.02.2012.

Research output: Contribution to journalArticle

Kato, Shinya ; Watanabe, Yuya ; Kurokawa, Yasuyoshi ; Yamada, Akira ; Ohta, Yoshimi ; Niwa, Yusuke ; Hirota, masaki. / Metal-Assisted chemical etching using silica nanoparticle for the fabrication of a silicon nanowire array. In: Japanese Journal of Applied Physics. 2012 ; Vol. 51, No. 2 PART 2.
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