30-nm-diameter silica nanoparticles with a carboxyl radical (COO -) were successfully dispersed on an amino-treated silicon wafer at about 20 nm intervals owing to the repulsion among nanoparticles with negative charges. The dispersed silica nanoparticles were used as the mask for the preparation of silicon nanowire (SiNW) arrays by metal-assisted chemical etching (MAE). The diameter of the prepared SiNWs was approximately 30nm from their transmission electron microscope image.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)