Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply

Kenji Makihira, Hiroyuki Nozaki, Tanemasa Asano, Mitsutoshi Miyasaka

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Metal-induced lateral crystallization(MILC) under reduced Ni supply have been investigated. By reducing the amount of Ni supply, the dependence of poly-Si growth characteristics on annealing temperature and on Ni source pattern was found to appear. Growth characteristics were changed from even growth front to un-even needlelike edge with reducing annealing temperature. Growth at high temperature annealing was found to be dominated by diffusion of Ni. Needlelike crystal having about 10μm length and about 160nm width was obtained at 450°C annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.

Original languageEnglish
Pages (from-to)207-212
Number of pages6
JournalSolid State Phenomena
Volume93
Publication statusPublished - 2003
Externally publishedYes

Fingerprint

Crystallization
Nickel
Amorphous silicon
amorphous silicon
Metals
nickel
Annealing
crystallization
annealing
metals
Temperature
Polysilicon
temperature
Nucleation
nucleation
Crystals
crystals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Physics and Astronomy (miscellaneous)
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Makihira, K., Nozaki, H., Asano, T., & Miyasaka, M. (2003). Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply. Solid State Phenomena, 93, 207-212.

Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply. / Makihira, Kenji; Nozaki, Hiroyuki; Asano, Tanemasa; Miyasaka, Mitsutoshi.

In: Solid State Phenomena, Vol. 93, 2003, p. 207-212.

Research output: Contribution to journalArticle

Makihira, K, Nozaki, H, Asano, T & Miyasaka, M 2003, 'Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply', Solid State Phenomena, vol. 93, pp. 207-212.
Makihira, Kenji ; Nozaki, Hiroyuki ; Asano, Tanemasa ; Miyasaka, Mitsutoshi. / Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply. In: Solid State Phenomena. 2003 ; Vol. 93. pp. 207-212.
@article{922d71a0c6064807a7390f939833fc02,
title = "Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply",
abstract = "Metal-induced lateral crystallization(MILC) under reduced Ni supply have been investigated. By reducing the amount of Ni supply, the dependence of poly-Si growth characteristics on annealing temperature and on Ni source pattern was found to appear. Growth characteristics were changed from even growth front to un-even needlelike edge with reducing annealing temperature. Growth at high temperature annealing was found to be dominated by diffusion of Ni. Needlelike crystal having about 10μm length and about 160nm width was obtained at 450°C annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.",
author = "Kenji Makihira and Hiroyuki Nozaki and Tanemasa Asano and Mitsutoshi Miyasaka",
year = "2003",
language = "English",
volume = "93",
pages = "207--212",
journal = "Solid State Phenomena",
issn = "1012-0394",
publisher = "Scientific.net",

}

TY - JOUR

T1 - Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply

AU - Makihira, Kenji

AU - Nozaki, Hiroyuki

AU - Asano, Tanemasa

AU - Miyasaka, Mitsutoshi

PY - 2003

Y1 - 2003

N2 - Metal-induced lateral crystallization(MILC) under reduced Ni supply have been investigated. By reducing the amount of Ni supply, the dependence of poly-Si growth characteristics on annealing temperature and on Ni source pattern was found to appear. Growth characteristics were changed from even growth front to un-even needlelike edge with reducing annealing temperature. Growth at high temperature annealing was found to be dominated by diffusion of Ni. Needlelike crystal having about 10μm length and about 160nm width was obtained at 450°C annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.

AB - Metal-induced lateral crystallization(MILC) under reduced Ni supply have been investigated. By reducing the amount of Ni supply, the dependence of poly-Si growth characteristics on annealing temperature and on Ni source pattern was found to appear. Growth characteristics were changed from even growth front to un-even needlelike edge with reducing annealing temperature. Growth at high temperature annealing was found to be dominated by diffusion of Ni. Needlelike crystal having about 10μm length and about 160nm width was obtained at 450°C annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.

UR - http://www.scopus.com/inward/record.url?scp=0242665691&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0242665691&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0242665691

VL - 93

SP - 207

EP - 212

JO - Solid State Phenomena

JF - Solid State Phenomena

SN - 1012-0394

ER -