Metal-induced low-temperature crystallization of amorphous SiGe on insulating films

M. Miyao, H. Kanno, I. Tsunoda, T. Sadoh, A. Kenjo

Research output: Contribution to journalConference articlepeer-review

Abstract

Metal-induced low temperature (≤ 550°C) crystallization of a-Si1-xGex (0 ≤ x ≤ 1) layers on SiO2 films has been investigated. For low Ge fractions below 20%, Ge-doping enhanced plane growth was observed. This realized strain-free poly-Si0.8Ge0.2 films with large grains (18 μm). On the other hand, dendrite growth was dominant for intermediate Ge fractions with 40-60%. Directions and widths of dendrites became straight and narrow with decreasing annealing temperature. As a result, very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained at the optimized growth conditions (x: 0.4, annealing: 450°C, 20 h). These new polycrystalline SiGe films on insulators should be used for the advanced system-in-displays and novel one-dimensional wires.

Original languageEnglish
Pages (from-to)55-59
Number of pages5
JournalMaterials Research Society Symposium - Proceedings
Volume744
DOIs
Publication statusPublished - Jan 1 2002
EventQuantum Confined Semiconductor Nanostructures - Boston MA, United States
Duration: Dec 2 2002Dec 5 2002

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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