Metal-induced solid-phase crystallization of amorphous SiGe films on insulator

Hiroshi Kanno, Isao Tsunoda, Atsushi Kenjo, Taizoh Sadoh, Shinya Yamaguchi, Masanobu Miyao

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The metal-induced low-temperature (≤550°C) crystallization of a-Si1-xGex (0 ≤ × ≤ 1) on SiO2 has been investigated. A Ge-fraction-dependent crystal growth was observed. In the case of a low-Ge fraction, plane growth dominated, the velocity of which was enhanced by 80% with increasing Ge fraction from 0 to 20%. This produced strain-free poly-SiGe with large grains (18 μm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (40-60%). By optimizing the growth conditions (x: 0.4, annealing: 450°C, 20 h), very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained. These new polycrystalline SiGe films on insulator should be used for system-in-display, three-dimensional ultra large-scall integrated circuits, and novel one-dimensional wires.

Original languageEnglish
Pages (from-to)1933-1936
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume42
Issue number4 B
Publication statusPublished - Apr 1 2003

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solid phases
Crystallization
insulators
crystallization
Metals
metals
Crystal growth
Integrated circuits
dendrites
Display devices
Wire
Annealing
integrated circuits
crystal growth
Crystals
wire
annealing
crystals
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Metal-induced solid-phase crystallization of amorphous SiGe films on insulator. / Kanno, Hiroshi; Tsunoda, Isao; Kenjo, Atsushi; Sadoh, Taizoh; Yamaguchi, Shinya; Miyao, Masanobu.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, No. 4 B, 01.04.2003, p. 1933-1936.

Research output: Contribution to journalArticle

Kanno, Hiroshi ; Tsunoda, Isao ; Kenjo, Atsushi ; Sadoh, Taizoh ; Yamaguchi, Shinya ; Miyao, Masanobu. / Metal-induced solid-phase crystallization of amorphous SiGe films on insulator. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2003 ; Vol. 42, No. 4 B. pp. 1933-1936.
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