The metal-induced low-temperature (≤550°C) crystallization of a-Si<SUB>1−<I>x</I></SUB>Ge<I><SUB>x</SUB></I> (0≤<I>x</I>≤1) on SiO<SUB>2</SUB> has been investigated. A Ge-fraction-dependent crystal growth was observed. In the case of a low-Ge fraction, plane growth dominated, the velocity of which was enhanced by 80% with increasing Ge fraction from 0 to 20%. This produced strain-free poly-SiGe with large grains (18 μm). On the other hand, dendrite growth became dominant in the case of intermediate Ge fractions (40–60%). By optimizing the growth conditions (<I>x</I>: 0.4, annealing: 450°C, 20 h), very sharp needlelike crystals (width: 0.05 μm, length: 10 μm) were obtained. These new polycrystalline SiGe films on insulator should be used for system-in-display, three-dimensional ultra large-scall integrated circuits, and novel one-dimensional wires.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2003|