Metastable-defect behaviors of iron-boron pairs in silicon

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Abstract

Structurally metastable Fei-Bs pairs in silicon have been detected using dark or photo capacitance-transient technique combined with minority-carrier injection below 200 K. Five levels at EC-0.43 eV, 0.46 eV, 0.52 eV, and 0.54 eV and EV+0.53 eV are observed as the metastable defects after the injection. These defects annihilate by annealing at 250 K for a few minutes. The transmutations for respective defects are confirmed by isochronal anneals, and the reaction kinetics are studied by isothermal anneals. From these investigations, the pair configurations responsible for these new defect levels are proposed.

Original languageEnglish
Pages (from-to)1191-1196
Number of pages6
JournalUnknown Journal
Volume143-4
Issue numberpt 2
Publication statusPublished - 1994

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Boron
Silicon
boron
silicon
defect
Iron
iron
Defects
reaction kinetics
annealing
Reaction kinetics
Capacitance
Annealing

All Science Journal Classification (ASJC) codes

  • Materials Science(all)

Cite this

Metastable-defect behaviors of iron-boron pairs in silicon. / Nakashima, Hiroshi; Sadoh, Taizoh; Tsurushima, T.

In: Unknown Journal, Vol. 143-4, No. pt 2, 1994, p. 1191-1196.

Research output: Contribution to journalArticle

Nakashima, H, Sadoh, T & Tsurushima, T 1994, 'Metastable-defect behaviors of iron-boron pairs in silicon', Unknown Journal, vol. 143-4, no. pt 2, pp. 1191-1196.
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