TY - JOUR
T1 - Method for detecting defects in silicon-on-insulator using capacitance transient spectroscopy
AU - Nakashima, Hiroshi
AU - Wang, Dong
AU - Noguchi, Takashi
AU - Itani, Kousuke
AU - Wang, Junli
AU - Zhao, Liwei
PY - 2004/5
Y1 - 2004/5
N2 - A method for detecting defects such as interface states and a deep trap in Si-on-insulator (SOI) has been proposed, which is based on deep-level transient spectroscopy (DLTS) analysis of the metal-oxide semiconductor (MOS) structure. It is shown, for a bonded p-type SOI wafer consisting of 5 μm top-Si (T-Si) and 1 μn buried oxide (BOX) layers, that the interface state densities between T-Si/BOX and BOX/back-Si (B-Si) can be measured. Furthermore, the validity of this DLTS technique for the detection of a discrete deep level has been confirmed by using a Fe-doped SOI wafer. It is shown that the Fe concentration in B-Si is consistent with that of bulk Si, while the Fe concentration in T-Si shows significant enhancement. Through these investigations of SOI wafers, the validity of this DLTS method has been demonstrated.
AB - A method for detecting defects such as interface states and a deep trap in Si-on-insulator (SOI) has been proposed, which is based on deep-level transient spectroscopy (DLTS) analysis of the metal-oxide semiconductor (MOS) structure. It is shown, for a bonded p-type SOI wafer consisting of 5 μm top-Si (T-Si) and 1 μn buried oxide (BOX) layers, that the interface state densities between T-Si/BOX and BOX/back-Si (B-Si) can be measured. Furthermore, the validity of this DLTS technique for the detection of a discrete deep level has been confirmed by using a Fe-doped SOI wafer. It is shown that the Fe concentration in B-Si is consistent with that of bulk Si, while the Fe concentration in T-Si shows significant enhancement. Through these investigations of SOI wafers, the validity of this DLTS method has been demonstrated.
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U2 - 10.1143/JJAP.43.2402
DO - 10.1143/JJAP.43.2402
M3 - Article
AN - SCOPUS:3142776507
SN - 0021-4922
VL - 43
SP - 2402
EP - 2408
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 5 A
ER -