A method for detecting defects such as interface states and a deep trap in Si-on-insulator (SOI) has been proposed, which is based on deep-level transient spectroscopy (DLTS) analysis of the metal-oxide semiconductor (MOS) structure. It is shown, for a bonded p-type SOI wafer consisting of 5 μm top-Si (T-Si) and 1 μn buried oxide (BOX) layers, that the interface state densities between T-Si/BOX and BOX/back-Si (B-Si) can be measured. Furthermore, the validity of this DLTS technique for the detection of a discrete deep level has been confirmed by using a Fe-doped SOI wafer. It is shown that the Fe concentration in B-Si is consistent with that of bulk Si, while the Fe concentration in T-Si shows significant enhancement. Through these investigations of SOI wafers, the validity of this DLTS method has been demonstrated.
|Number of pages||7|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Issue number||5 A|
|Publication status||Published - May 2004|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)