Method for estimating accurate deep-trap densities from dlts of junctions containing several kinds of deep-traps

Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    The density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a considerable error appears in the trap-density estimations. For such a case, it is necessary to solve exactly Poisson’ s equation for the depletion region in transient sequence to deduce the trap densities. A method for accurate trap-density evaluation is introduced, and the results of the analysis for the DLTS spectrum of a gold-doped n-type silicon Schottky diode are discussed.

    Original languageEnglish
    Pages (from-to)1402-1406
    Number of pages5
    JournalJapanese Journal of Applied Physics
    Volume28
    Issue number8R
    DOIs
    Publication statusPublished - Aug 1 1989

    Fingerprint

    Deep level transient spectroscopy
    estimating
    Semiconductor junctions
    traps
    Poisson equation
    Diodes
    Capacitance
    Gold
    Silicon
    depletion
    semiconductor junctions
    Schottky diodes
    capacitance
    gold
    evaluation
    silicon

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)
    • Physics and Astronomy (miscellaneous)

    Cite this

    Method for estimating accurate deep-trap densities from dlts of junctions containing several kinds of deep-traps. / Nakashima, Hiroshi; Hashimoto, Kimio.

    In: Japanese Journal of Applied Physics, Vol. 28, No. 8R, 01.08.1989, p. 1402-1406.

    Research output: Contribution to journalArticle

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