Method for estimating accurate deep-trap densities from dlts of junctions containing several kinds of deep-traps

Hiroshi Nakashima, Kimio Hashimoto

    Research output: Contribution to journalArticle

    9 Citations (Scopus)

    Abstract

    The density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a considerable error appears in the trap-density estimations. For such a case, it is necessary to solve exactly Poisson’ s equation for the depletion region in transient sequence to deduce the trap densities. A method for accurate trap-density evaluation is introduced, and the results of the analysis for the DLTS spectrum of a gold-doped n-type silicon Schottky diode are discussed.

    Original languageEnglish
    Pages (from-to)1402-1406
    Number of pages5
    JournalJapanese journal of applied physics
    Volume28
    Issue number8R
    DOIs
    Publication statusPublished - Aug 1 1989

    All Science Journal Classification (ASJC) codes

    • Engineering(all)
    • Physics and Astronomy(all)

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