TY - JOUR
T1 - Method for estimating accurate deep-trap densities from dlts of junctions containing several kinds of deep-traps
AU - Nakashima, Hiroshi
AU - Hashimoto, Kimio
PY - 1989/8/1
Y1 - 1989/8/1
N2 - The density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a considerable error appears in the trap-density estimations. For such a case, it is necessary to solve exactly Poisson’ s equation for the depletion region in transient sequence to deduce the trap densities. A method for accurate trap-density evaluation is introduced, and the results of the analysis for the DLTS spectrum of a gold-doped n-type silicon Schottky diode are discussed.
AB - The density of a deep trap is estimated from the peak height of the DLTS signal and the steady-state capacitance on a reverse-biased semiconductor junction. When several kinds of traps exist in the depletion region and the trap densities are not much smaller than the net shallow-level density, a considerable error appears in the trap-density estimations. For such a case, it is necessary to solve exactly Poisson’ s equation for the depletion region in transient sequence to deduce the trap densities. A method for accurate trap-density evaluation is introduced, and the results of the analysis for the DLTS spectrum of a gold-doped n-type silicon Schottky diode are discussed.
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U2 - 10.1143/jjap.28.1402
DO - 10.1143/jjap.28.1402
M3 - Article
AN - SCOPUS:0024718222
SN - 0021-4922
VL - 28
SP - 1402
EP - 1406
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 8R
ER -