Abstract
InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.
Original language | English |
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Pages (from-to) | 880041-880042 |
Number of pages | 2 |
Journal | Japanese journal of applied physics |
Volume | 48 |
Issue number | 8 Part 1 |
DOIs | |
Publication status | Published - 2009 |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)