Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Tomoe Yayama; Yoshihiro Kangawa; Koichi Kakimoto; Akinori Koukitu

doi:10.1143/JJAP.48.088004

Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

In_xGa_1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown In_xGa _1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown In_xGa_1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

Original language	English
Pages (from-to)	880041-880042
Number of pages	2
Journal	Japanese journal of applied physics
Volume	48
Issue number	8 Part 1
DOIs	https://doi.org/10.1143/JJAP.48.088004
Publication status	Published - 2009

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.48.088004

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@article{6af14a7d416f4e21bd4b5e8a6d12d84b,

title = "Method for theoretical prediction of indium composition in coherently grown InGaN thin films",

abstract = "InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.",

author = "Tomoe Yayama and Yoshihiro Kangawa and Koichi Kakimoto and Akinori Koukitu",

year = "2009",

doi = "10.1143/JJAP.48.088004",

language = "English",

volume = "48",

pages = "880041--880042",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "8 Part 1",

}

TY - JOUR

T1 - Method for theoretical prediction of indium composition in coherently grown InGaN thin films

AU - Yayama, Tomoe

AU - Kangawa, Yoshihiro

AU - Kakimoto, Koichi

AU - Koukitu, Akinori

PY - 2009

Y1 - 2009

N2 - InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

AB - InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

UR - http://www.scopus.com/inward/record.url?scp=77952679500&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77952679500&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.088004

DO - 10.1143/JJAP.48.088004

M3 - Article

AN - SCOPUS:77952679500

VL - 48

SP - 880041

EP - 880042

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 8 Part 1

ER -

Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Abstract

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