Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

Original languageEnglish
Pages (from-to)880041-880042
Number of pages2
JournalJapanese Journal of Applied Physics
Volume48
Issue number8 Part 1
DOIs
Publication statusPublished - Dec 1 2009

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All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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