Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Tomoe Yayama; Yoshihiro Kangawa; Koichi Kakimoto; Akinori Koukitu

doi:10.1143/JJAP.48.088004

Method for theoretical prediction of indium composition in coherently grown InGaN thin films

Tomoe Yayama, Yoshihiro Kangawa, Koichi Kakimoto, Akinori Koukitu

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

In_xGa_1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown In_xGa _1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown In_xGa_1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

Original language	English
Pages (from-to)	880041-880042
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	8 Part 1
DOIs	https://doi.org/10.1143/JJAP.48.088004
Publication status	Published - Dec 1 2009

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All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

Yayama, T., Kangawa, Y., Kakimoto, K., & Koukitu, A. (2009). Method for theoretical prediction of indium composition in coherently grown InGaN thin films. Japanese Journal of Applied Physics, 48(8 Part 1), 880041-880042. https://doi.org/10.1143/JJAP.48.088004

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AU - Kakimoto, Koichi

AU - Koukitu, Akinori

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AB - InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.

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10.1143/JJAP.48.088004