Mgnetoresistance in ballistic Ni nanocontact at 4.2K

Koichiro Ienaga; Naoya Nakashima; Yuji Inagaki; Tatsuya Kawae; Hiroyuki Tsujii

doi:10.1109/TENCON.2010.5686404

Mgnetoresistance in ballistic Ni nanocontact at 4.2K

Koichiro Ienaga, Naoya Nakashima, Yuji Inagaki, Tatsuya Kawae, Hiroyuki Tsujii

Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching wthe direction of the magnetization axis.

Original language	English
Title of host publication	TENCON 2010 - 2010 IEEE Region 10 Conference
Pages	1891-1893
Number of pages	3
DOIs	https://doi.org/10.1109/TENCON.2010.5686404
Publication status	Published - Dec 1 2010
Event	2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan Duration: Nov 21 2010 → Nov 24 2010

Other

Other	2010 IEEE Region 10 Conference, TENCON 2010
Country	Japan
City	Fukuoka
Period	11/21/10 → 11/24/10

Fingerprint

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Computer Science Applications

Cite this

Ienaga, K., Nakashima, N., Inagaki, Y., Kawae, T., & Tsujii, H. (2010). Mgnetoresistance in ballistic Ni nanocontact at 4.2K. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 1891-1893). [5686404] https://doi.org/10.1109/TENCON.2010.5686404

@inproceedings{2e588f9d3805432ca192ed1b18ad5e0f,

title = "Mgnetoresistance in ballistic Ni nanocontact at 4.2K",

abstract = "The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching wthe direction of the magnetization axis.",

author = "Koichiro Ienaga and Naoya Nakashima and Yuji Inagaki and Tatsuya Kawae and Hiroyuki Tsujii",

year = "2010",

month = "12",

day = "1",

doi = "10.1109/TENCON.2010.5686404",

language = "English",

isbn = "9781424468904",

pages = "1891--1893",

booktitle = "TENCON 2010 - 2010 IEEE Region 10 Conference",

}

TY - GEN

T1 - Mgnetoresistance in ballistic Ni nanocontact at 4.2K

AU - Ienaga, Koichiro

AU - Nakashima, Naoya

AU - Inagaki, Yuji

AU - Kawae, Tatsuya

AU - Tsujii, Hiroyuki

PY - 2010/12/1

Y1 - 2010/12/1

N2 - The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching wthe direction of the magnetization axis.

AB - The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching wthe direction of the magnetization axis.

UR - http://www.scopus.com/inward/record.url?scp=79951593898&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=79951593898&partnerID=8YFLogxK

U2 - 10.1109/TENCON.2010.5686404

DO - 10.1109/TENCON.2010.5686404

M3 - Conference contribution

AN - SCOPUS:79951593898

SN - 9781424468904

SP - 1891

EP - 1893

BT - TENCON 2010 - 2010 IEEE Region 10 Conference

ER -

Access to Document

10.1109/TENCON.2010.5686404