Mgnetoresistance in ballistic Ni nanocontact at 4.2K

Koichiro Ienaga, Naoya Nakashima, Yuji Inagaki, Tatsuya Kawae, Hiroyuki Tsujii

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

The magnetoresistance (MR) effect is studied in Ni atomic-sized contact at 4.2K. We show that the magnetostriction gives rise to a huge MR ratio by switching wthe direction of the magnetization axis.

Original languageEnglish
Title of host publicationTENCON 2010 - 2010 IEEE Region 10 Conference
Pages1891-1893
Number of pages3
DOIs
Publication statusPublished - Dec 1 2010
Event2010 IEEE Region 10 Conference, TENCON 2010 - Fukuoka, Japan
Duration: Nov 21 2010Nov 24 2010

Other

Other2010 IEEE Region 10 Conference, TENCON 2010
CountryJapan
CityFukuoka
Period11/21/1011/24/10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Computer Science Applications

Cite this

Ienaga, K., Nakashima, N., Inagaki, Y., Kawae, T., & Tsujii, H. (2010). Mgnetoresistance in ballistic Ni nanocontact at 4.2K. In TENCON 2010 - 2010 IEEE Region 10 Conference (pp. 1891-1893). [5686404] https://doi.org/10.1109/TENCON.2010.5686404